FDN86501LZ PDF даташит
Спецификация FDN86501LZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor )». |
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Детали детали
Номер произв | FDN86501LZ |
Описание | MOSFET ( Transistor ) |
Производители | Fairchild Semiconductor |
логотип |
7 Pages
No Preview Available ! |
October 2015
FDN86501LZ
N-Channel Shielded Gate PowerTrench® MOSFET
60 V, 2.6 A, 116 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A
Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
Primary DC-DC Switch
Load Switch
RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
60
±20
2.6
24
6
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
75
80
°C/W
Device Marking
8650
Device
FDN86501LZ
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDN86501LZ Rev.1.1
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 2.6 A
VGS = 4.5 V, ID = 2.1 A
VGS = 10 V, ID = 2.6 A, TJ = 125 °C
VDS = 10 V, ID = 2.6 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 2.6 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 2.6 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.6 A
(Note 2)
IF = 2.6 A, di/dt = 100 A/μs
Min.
60
1.0
0.1
Typ.
68
1.9
-5
89
121
152
8
236
77
4.9
0.8
4.4
1.2
9.6
1.2
3.8
1.9
0.7
0.6
0.9
31
19
Max. Units
V
mV/°C
1 μA
±10 μA
2.4 V
mV/°C
116
173 mΩ
198
S
335 pF
110 pF
10 pF
2.0 Ω
10 ns
10 ns
20 ns
10 ns
5.4 nC
2.7 nC
nC
nC
1.3 V
50 ns
31 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 180 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 6 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 2 A, VDD = 60 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 9 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
©2015 Fairchild Semiconductor Corporation
FDN86501LZ Rev.1.1
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
VGS = 10 V
VGS = 5.5 V
8
VGS = 4.5 V
6
VGS = 3.5 V
4
2
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
5
VGS = 3 V
4
VGS = 3.5 V
3
2 VGS = 4.5 V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
024
VGS = 5.5 V VGS = 10 V
6 8 10
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
2.0
1.8
ID = 2.6 A
VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
500
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
400
ID = 2.6 A
300
TJ = 125 oC
200
100
0
2
TJ = 25 oC
3456789
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
VDS = 5 V
6
4
TJ = 150 oC
TJ = 25 oC
2
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
20
10 VGS = 0 V
1
0.1
0.01
0.0010.0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2015 Fairchild Semiconductor Corporation
FDN86501LZ Rev.1.1
3
www.fairchildsemi.com
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