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MGF65A3H PDF даташит

Спецификация MGF65A3H изготовлена ​​​​«Sanken» и имеет функцию, называемую «Trench Field Stop IGBT».

Детали детали

Номер произв MGF65A3H
Описание Trench Field Stop IGBT
Производители Sanken
логотип Sanken логотип 

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MGF65A3H Даташит, Описание, Даташиты
VCE = 650 V, IC = 30 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Data Sheet
Description
KGF65A3H, MGF65A3H, and FGF65A3H are 650 V
Field Stop IGBTs. Sanken original trench structure
decreases gate capacitance, and achieves high speed
switching and switching loss reduction. Thus, Field Stop
IGBTs can improve the efficiency of your circuit.
Features
Low Saturation Voltage
High Speed Switching
With Integrated Fast Recovery Diode
RoHS Compliant
VCE ------------------------------------------------------ 650 V
IC (TC = 100 °C) ----------------------------------------- 30 A
Short Circuit Withstand Time ----------------------- 10 μs
VCE(sat)-----------------------------------------------1.9 V typ.
tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
VF----------------------------------------------------1.8 V typ.
Applications
Welding Converters
PFC Circuit
Package
TO247-3L
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
(1)
TO3P-3L
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(3)
(4)
Selection Guide
Part Number
KGF65A3H
MGF65A3H
FGF65A3H
Not to scale
Package
TO247-3L
TO3P-3L
TO3PF-3L
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
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MGF65A3H Даташит, Описание, Даташиты
KGF65A3H, MGF65A3H, FGF65A3H
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
VCE
VGE
Continuous Collector Current (1)
IC
Pulsed Collector Current
IC(PULSE)
Diode Continuous Forward Current (1)
IF
Diode Pulsed Forward Current
IF(PULSE)
Short Circuit Withstand Time
tSC
Conditions
TC = 25 °C
TC = 100 °C
PW 1 ms,
duty cycle 1%
TC = 25 °C
TC = 100 °C
PW 1 ms,
duty cycle 1%
VGE = 15 V,
VCE = 400 V
TJ = 175 °C
Power Dissipation
PD TC = 25 °C
Operating Junction Temperature
Storage Temperature Range
TJ
TSTG
Rating
650
±30
50
30
90
40(2)
30
90
10
217
72
175
55 to 150
Unit Remarks
V
V
A
A
A
A
A
A
μs
MGF65A3H
W KGF65A3H
FGF65A3H
°C
°C
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance of IGBT
(Junction to Case)
RθJC (IGBT)
Thermal Resistance of Diode
(Junction to Case)
RθJC (Di)
Conditions
Min. Typ.
——
——
——
——
Max.
0.69
2.08
1.15
2.28
Unit
°C/W
°C/W
Remarks
MGF65A3H
KGF65A3H
FGF65A3H
MGF65A3H
KGF65A3H
FGF65A3H
(1) IC and IF are determined by the maximum junction temperature for TO3P-3L package.
(2) Determined by bonding wires capability.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
2









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MGF65A3H Даташит, Описание, Даташиты
KGF65A3H, MGF65A3H, FGF65A3H
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Collector to Emitter Breakdown
Voltage
V(BR)CES
Collector to Emitter Leakage Current
ICES
Gate to Emitter Leakage Current
IGES
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
VGE(TH)
VCE(sat)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Qg
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy (3)
Turn-off Energy
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy (3)
Turn-off Energy
Emitter to Collector Diode Forward
Voltage
Emitter to Collector Diode Reverse
Recovery Time
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
VF
trr
Conditions
IC = 100 μA, VGE = 0 V
VCE = 650 V, VGE = 0 V
VGE = ±30 V
VCE = 10 V, IC = 1 mA
VGE = 15 V, IC = 30 A
VCE = 20 V,
VGE = 0 V,
f = 1.0 MHz,
VCE = 520 V, IC = 30 A,
VGE = 15 V
TJ = 25 °C,
see Figure 1.
TJ = 175 °C,
see Figure 1.
IF = 30 A
IF = 30 A,
di/dt = 700 A/μs
Min.
650
4.0
Typ.
5.5
1.9
1800
200
80
60
30
30
90
30
0.5
0.4
30
30
120
60
1.0
0.7
1.8
50
Max.
100
±500
7.0
2.37
Unit
V
µA
nA
V
V
pF
nC
ns
mJ
ns
mJ
V
ns
(3) Energy losses include the reverse recovery of diode.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
3










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