(PDF) 3DA5371 Datasheet - NPN Transistor

Número de pieza	3DA5371
Descripción	NPN Transistor
Fabricantes	KOO CHIN
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No Preview Available ! 3DA5371 TRANSISTOR (NPN) TO-220F FEATURES z Breakdown Voltage High z Reverse Cut-off Current Small z Saturation Voltage Low z Power dissipation PCM : 1.5W (Tamb=25℃) 25 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature 1. BASE 2. COLLECTOR 3. EMITTE Value 180 160 6 1.5 150 -55-150 Units V V V A ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 180 Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 160 Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 Collector cut-off current ICBO VCB=180V, IE=0 Emitter cut-off current IEBO VEB=6V, IC=0 DC current gain hFE * VCE=5V, IC=200mA 60 Collector-emitter saturation voltage VCE(sat) * IC=500mA, IB=50mA Transition frequency *Pulse test: tp≤300µS, δ≤0.02. fT VCE=10V, IC=50mA 50 TYP MAX UNIT V V V 10 µA 10 µA 240 1V MHz CLASSIFICATION OF hFE Rank Range O 60-140 R 100-240 1 page

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PDF 3DA5371 Data sheet ( Hoja de datos )