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Número de pieza | IPI076N12N3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPI076N12N3G (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on)max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
120 V
7.6 mW
100 A
Type
IPI076N12N3 G
IPP076N12N3 G
Package
Marking
PG-TO262-3
076N12N
PG-TO220-3
076N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100
76
400
230
±20
188
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.4
page 1
2013-09-25
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
350
10 V
8V
7V
300
250
200
6.5 V
150 6 V
100
5.5 V
50
0
0
5V
4.5 V
123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
4
150
100
50
175 °C
25 °C
0
0
Rev. 2.4
246
VGS [V]
IPI076N12N3 G IPP076N12N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
4.5 V
5V
5.5 V
15
10
6V
10 V
5
0
50
50 100
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
150
160
140
120
100
80
60
40
20
0
80
page 5
40 80 120
ID [A]
160
2013-09-25
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPI076N12N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPI076N12N3G | Power-Transistor | Infineon |
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