|
|
PDF SIF902EDZ Data sheet ( Hoja de datos )
| Número de pieza | SIF902EDZ | |
| Descripción | Bi-Directional N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SIF902EDZ (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SiF902EDZ
Vishay Siliconix
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V
0.023 at VGS = 4.0 V
20
0.026 at VGS = 3.1 V
0.028 at VGS = 2.5 V
ID (A)
10.3
10.0
9.4
9.0
Qg (Typ.)
9.1
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET: 2.5 V Rated
• ESD Protected: 4000 V
APPLICATIONS
• Battery Protection Circuitry
- Cell Li-lon LiB/LiP Battery Packs
RoHS
COMPLIANT
PowerPAK® 2 x 5
1
S1 2 mm
2
S1
G1
3
6
S2 5
S2 4
G2
Marking Code
MAXYZ
MA: Part # Code
XYZ: Lot Traceability and Date Code
Ordering Information: SiF902EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
1.8 kΩ
D1
1.8 kΩ
G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
10.3 7.0
7.4 5.1
Pulsed Drain Current (VGS = 8 V)
IDM 40
Continuous Diode Current (Diode Conduction)a
IS 3.1 1.5
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
3.5 1.6
1.8 0.86
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
30
61
4.8
Maximum
36
76
6.0
Unit
V
A
W
°C
Unit
°C/W
Document Number: 72987
S-80643-Rev. B, 24-Mar-08
www.vishay.com
1
1 page  
SiF902EDZ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72987.
Document Number: 72987
S-80643-Rev. B, 24-Mar-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SIF902EDZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SIF902EDZ | Bi-Directional N-Channel 20-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |