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PDF SIA950DJ Data sheet ( Hoja de datos )
| Número de pieza | SIA950DJ | |
| Descripción | Dual N-Channel 190-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
SiA950DJ
Vishay Siliconix
Dual N-Channel 190-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
190
RDS(on) (Ω)
3.8 at VGS = 4.5 V
4.2 at VGS = 2.5 V
17 at VGS = 1.8 V
ID (A)a
0.95
0.9
0.3
Qg (Typ.)
1.4 nC
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch for Portable Devices
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
CEX
XXX
Lot Traceability
and Date code
D1 D2
G1 G2
S1 S2
Ordering Information: SiA950DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
190
± 16
0.95
0.76
0.47b, c
0.38b, c
1
0.95
0.47b, c
7
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
Limited by RDS(on)*
1
100 µs
0.1
1 ms
10 ms
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.001
0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
1.2 8
SiA950DJ
Vishay Siliconix
0.9 6
0.6 4
0.3 2
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIA950DJ.PDF ] | |
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