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PDF IPC50N04S5L-5R5 Data sheet ( Hoja de datos )
| Número de pieza | IPC50N04S5L-5R5 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPC50N04S5L-5R5 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IPC50N04S5L-5R5
OptiMOS™-5 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
40 V
5.5 mW
50 A
PG-TDSON-8-33
1
1
Type
IPC50N04S5L-5R5
Package
Marking
PG-TDSON-8-33 5N04L5R5
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
50
42
200
30
50
±16
42
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2016-09-07
1 page  
IPC50N04S5L-5R5
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
200
10 V
150
100
3.5 V
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
25
2.5 V
20
2.75 V
15
3V
10
3.5 V
50 3 V
2.75 V
2.5 V
0
012
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
200
5
10 V
0
3 0 40 80 120 160
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 25 A; V GS = 10 V
200
9.5
160 8.5
7.5
120
6.5
80 5.5
40
175 °C
-55 °C
25 °C
0
1.5 2 2.5 3 3.5 4 4.5
VGS [V]
4.5
3.5
2.5
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.1
page 5
2016-09-07
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPC50N04S5L-5R5.PDF ] | |
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