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IPS65R400CE PDF даташит

Спецификация IPS65R400CE изготовлена ​​​​«Infineon» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв IPS65R400CE
Описание MOSFET ( Transistor )
Производители Infineon
логотип Infineon логотип 

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IPS65R400CE Даташит, Описание, Даташиты
IPD65R400CE,IPS65R400CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSuperjunction
MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand
conductionlossesmakeswitchingapplicationsevenmoreefficient,more
compact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•JEDECqualfied,Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
400
m
ID. 15.1 A
Qg.typ
39
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPD65R400CE
IPS65R400CE
Package
PG-TO 252
PG-TO 251
Marking
65S400CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-23









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IPS65R400CE Даташит, Описание, Даташиты
650VCoolMOSªCEPowerTransistor
IPD65R400CE,IPS65R400CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2 Rev.2.0,2016-02-23









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IPS65R400CE Даташит, Описание, Даташиты
650VCoolMOSªCEPowerTransistor
IPD65R400CE,IPS65R400CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation (Non FullPAK)
TO-252, TO-251
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
Values
Typ. Max.
- 15.1
- 9.5
- 30
- 215
- 0.32
- 1.8
- 50
- 20
- 30
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=1.8A; VDD=50V; see table 10
mJ ID=1.8A; VDD=50V; see table 10
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
- - 118 W TC=25°C
-55 -
-55 -
--
--
--
--
150
150
10.6
30
15
500
°C -
°C -
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.0,2016-02-23










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Номер в каталогеОписаниеПроизводители
IPS65R400CEMOSFET ( Transistor )Infineon
Infineon

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