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MRF5943G PDF даташит

Спецификация MRF5943G изготовлена ​​​​«Advanced Power Technology» и имеет функцию, называемую «RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS».

Детали детали

Номер произв MRF5943G
Описание RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Производители Advanced Power Technology
логотип Advanced Power Technology логотип 

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MRF5943G Даташит, Описание, Даташиты
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF5943, R1, R2
MRF5943G, R1, R2
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
Low Cost SO-8 Plastic Surface Mount Package.
S-Parameter Characterization
Tape and Reel Packaging Options Available
Maximum Available Gain = 17dB @ 300MHz
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and
oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
T
stg
RθJA
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Temperature
Thermal Resistance, Junction to Ambient
Value
30
40
3.5
400
1.0
8
150
125
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
ºC
ºC/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005









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MRF5943G Даташит, Описание, Даташиты
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICEO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, VBE = 0 Vdc)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc)
(on)
HFE
VCE(sat)
VBE(sat)
DC Current Gain
(IC = 50 mAdc, VCE = 15 Vdc)
Collector-emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mA)
Collector-emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mA)
DYNAMIC
Symbol
Ftau
Test Conditions
Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
MRF5943, R1, R2
MRF5943G, R1, R2
Min.
30
40
3.5
-
-
Value
Typ.
-
-
-
-
-
Max.
-
-
-
.01
.05
Unit
Vdc
Vdc
Vdc
mA
mA
25 - 300
.2 Vdc
1.0 Vdc
Min.
-
Value
Typ.
1.3
Max.
-
Unit
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005









No Preview Available !

MRF5943G Даташит, Описание, Даташиты
FUNCTIONAL
Symbol
G
U max
Test Conditions
Maximum Unilateral Gain
IC = 35 mAdc, VCE = 15 Vdc, f = 300 MHz
MAG
|S21|2
Maximum Available Gain
IC = 35 mAdc, VCE = 15 Vdc, f = 300 MHz
Insertion Gain
IC = 35 mAdc, VCE = 15 Vdc, f = 300 MHz
MRF5943, R1, R2
MRF5943G, R1, R2
Min.
-
-
11.5
Value
Typ.
15
17
12.5
Max.
-
-
-
Unit
dB
dB
dB
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 35 mA
f
(MHz)
10
30
50
70
100
300
500
700
1000
S11
|S11|
0.606
0.618
0.626
0.637
0.648
0.691
0.713
0.719
0.722
∠φ
-61
-120
-140
-151
-160
-178
172
161
153
S21
|S21|
54.49
35.44
24.09
17.89
12.8
4.3
2.53
1.79
1.22
∠φ
152
122
108
101
94
74
61
50
35
S12
|S12|
0.006
0.013
0.015
0.017
0.02
0.04
0.056
0.07
0.09
∠φ
67
47
44
44
47
57
58
59
62
S22
|S22|
0.87
0.579
0.441
0.377
0.335
0.313
0.348
0.391
0.449
∠φ
-20
-31
-35
-33
-29
-31
-44
-58
-75
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005










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