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8TQ100G PDF даташит

Спецификация 8TQ100G изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Schottky Rectifier ( Diode )».

Детали детали

Номер произв 8TQ100G
Описание Schottky Rectifier ( Diode )
Производители International Rectifier
логотип International Rectifier логотип 

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8TQ100G Даташит, Описание, Даташиты
Bulletin PD-20686 rev. A 01/06
SCHOTTKY RECTIFIER
8TQ...G
8 Amp
IF(AV) = 8 Amp
VR = 80 - 100V
Major Ratings and Characteristics
Characteristics
Value Units
IF(AV) Rectangular
waveform
VRRM range
IFSM @ tp = 5 µs sine
VF @8 Apk, TJ = 125°C
TJ range
8
80 - 100
850
0.58
- 55 to 175
A
V
A
V
°C
Description/ Features
The 8TQ...G Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175° C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
175° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
8TQ...G
Base
Cathode
www.irf.com
TO-220AC
1
Cathode
3
Anode
1









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8TQ100G Даташит, Описание, Даташиты
8TQ...G Series
Final PD-20686 rev. A 01/06
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
8TQ080G
80
8TQ100G
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
EAS Non-Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
8TQ
8
850
230
7.50
0.50
Units
Conditions
A 50% duty cycle @ TC = 157° C, rectangular wave form
A
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
mJ TJ = 25 °C, IAS= 0.50 Amps, L = 60 mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
8TQ
0.72
0.88
0.58
0.69
0.28
7
500
8
10000
Units
Conditions
V @ 8A
V @ 16A
V @ 8A
V @ 16A
TJ = 25 °C
TJ = 125 °C
mA
mA
pF
nH
V/ µs
TJ = 25 °C
TJ = 125 °C
VR = rated VR
VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
Thermal-Mechanical Specifications
Parameters
8TQ Units
Conditions
TJ Max. Junction Temperature Range -55 to 175 °C
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
to Case
-55 to 175 °C
2.0 °C/W DC operation * See Fig. 4
RthCS Typical Thermal Resistance, Case to
Heatsink
0.50
°C/W Mounting surface , smooth and greased
wt Approximate Weight
2 (0.07) g (oz.)
T Mounting Torque
Min.
Max.
6 (5) Kg-cm
12 (10) (Ibf-in)
Device Marking
8TQ...G
2 www.irf.com









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8TQ100G Даташит, Описание, Даташиты
1000
100
10
1
TJ= 175°C
TJ= 125°C
TJ= 25°C
8TQ...G Series
Final PD-20686 rev. A 01/06
100
10
1
0.1
0.01
TJ = 175°C
150°C
125°C
100°C
75°C
50°C
0.001
25°C
0.0001
0
20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1000
TJ = 25°C
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
100
0 10 20 30 40 50 60 70 80 90 100110
Reverse Volta ge - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.75
D = 0.50
D = 0.33
1 D = 0.25
D = 0.20
Single Pulse
(Thermal Resistance)
0.1
1E-04
1E-03
1E-02
1E-01
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
www.irf.com
1E+00
3










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