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1N1183A PDF даташит

Спецификация 1N1183A изготовлена ​​​​«Vishay» и имеет функцию, называемую «Power Silicon Rectifier Diodes».

Детали детали

Номер произв 1N1183A
Описание Power Silicon Rectifier Diodes
Производители Vishay
логотип Vishay логотип 

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1N1183A Даташит, Описание, Даташиты
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
• Compliant to RoHS directive 2002/95/EC
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
35 A/40 A/60 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
1N1183
1N3765
IF(AV)
IFSM
TC
50 Hz
60 Hz
35 (1)
140 (1)
480
500 (1)
35 (1)
140 (1)
380
400 (1)
I2t 50 Hz
60 Hz
1140
1040
730
670
I2t
VRRM
Range
16 100
50 to 600 (1)
10 300
700 to 1000 (1)
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
1N1183A
40 (1)
150 (1)
765
800 (1)
2900
2650
41 000
50 to 600 (1)
1N2128A
60 (1)
140 (1)
860
900 (1)
3700
3400
52 500
50 to 600 (1)
UNITS
A
°C
A
A2s
A2s
V
VOLTAGE RATINGS
TYPE NUMBER
1N1183
1N1184
1N1185
1N1186
1N1187
1N1188
1N1189
1N1190
1N3765
1N3766
1N3767
1N3768
1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N2128A
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2138A
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
Notes
(1) JEDEC registered values
(2) For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR
Document Number: 93492
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
1









No Preview Available !

1N1183A Даташит, Описание, Даташиты
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products Power Silicon Rectifier Diodes,
35 A/40 A/60 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
Maximum I2t for individual
device fusing
I2t
Maximum I2t for individual
device fusing
Maximum peak forward voltage
at maximum forward current (IFM)
VRRM = 700
Maximum average
reverse current
VRRM = 800
VRRM = 900
VRRM = 1000
I2t (2)
VFM
IR(AV)
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2t x tx
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A
1-phase operation,
180° sinusoidal conduction
35 (1)
140 (1)
35 (1)
140 (1)
40 (1)
150 (1)
60 (1)
140 (1)
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Following any
rated load
condition and
with rated
VRRM applied
480 380
765
860
500 (1) 400 (1) 800 (1)
900 (1)
Half cycle 50 Hz Following any
sine wave or 6 ms rated load
570 455
910
1000
rectangular pulse condition and
Half cycle 60 Hz with ½ VRRM
sine wave or 5 ms applied following 595
475
950
1050
rectangular pulse surge = 0
t = 10 ms
With rated VRRM
applied following
t = 8.3 ms
surge, initial
TJ = TJ maximum
t = 10 ms
With VRRM = 0
following surge,
t = 8.3 ms
initial TJ =
TJ maximum
t = 0.1 to 10 ms,
VRRM = 0 following surge
TJ = 25 °C
1140
1040
1610
1470
16 100
1.7 (1)
110
730
670
1030
940
10 300
1.8 (1)
110
2900
2650
4150
3750
41 500
1.3 (1)
126
3700
3400
5250
4750
52 500
1.3 (1)
188
- 5.0 (1)
-
-
Maximum rated IF(AV) and TC
- 4.0 (1)
- 3.0 (1)
-
-
-
-
- 2.0 (1)
-
-
Maximum rated IF(AV), VRRM and TC
10 (1)
-
2.5 (1)
10 (1)
UNITS
A
°C
A
A2s
A2s
V
A
mA
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 93492
Revision: 25-May-09









No Preview Available !

1N1183A Даташит, Описание, Даташиты
1N1183, 1N3765, 1N1183A, 1N2128A Series
Power Silicon Rectifier Diodes, Vishay High Power Products
35 A/40 A/60 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum operating
case temperature range
Maximum storage
temperature range
TC
TStg
- 65 to 190 (1)
- 65 to 175 (1)
- 65 to 200
- 65 to 200
°C
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
RthJC
DC operation
RthCS Mounting surface, smooth, flat and greased
1.00 (1)
1.1 (1)
0.25
0.65 (1)
°C/W
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
Not lubricated thread, tighting on nut (2)
Lubricated thread, tighting on nut (2)
Not lubricated thread, tighting on hexagon (3)
Lubricated thread, tighting on hexagon (3)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
N·m
(lbf · in)
Approximate weight
17 g
0.6 oz.
Case style
JEDEC
Notes
(1) JEDEC registered values
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
DO-203AB (DO-5)
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Document Number: 93492
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
3










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