CS8N80FA9D PDF даташит
Спецификация CS8N80FA9D изготовлена «Huajing Microelectronics» и имеет функцию, называемую «Silicon N-Channel Power MOSFET». |
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Детали детали
Номер произв | CS8N80FA9D |
Описание | Silicon N-Channel Power MOSFET |
Производители | Huajing Microelectronics |
логотип |
10 Pages
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Silicon N-Channel Power MOSFET
CS8N80F A9D
○R
General Description:
CS8N80F A9D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:47nC)
l Low Reverse transfer capacitances(Typical:12pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
800
8
50
1.1
Rating
800
8
5.4
32
±30
350
55
3.3
5.0
50
0.4
4000
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
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CS8N80F A9D
○R
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25℃
VDS = 800V, VGS= 0V,
Ta = 25℃
VDS =640V, VGS= 0V,
Ta = 125℃
VGS =+20V
VGS =-20V
Rating
Min. Typ. Max.
800 -- --
-- 0.85 --
-- -- 25
-- -- 250
Units
V
V/℃
µA
-- -- 10 µA
-- -- -10 µA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Test Conditions
VGS=10V,ID=4.0A
VDS = VGS, ID = 250µA
Test Conditions
VDS=15V, ID =4.0A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =8.0A VDD = 400V
VGS = 10V RG = 4.7Ω
ID =8.0A VDD =640V
VGS = 10V
Rating
Min. Typ. Max.
-- 1.1 1.25
2.0 4.0
Units
Ω
V
Rating
Min. Typ. Max.
-- 8.5 --
-- 2100 --
-- 152 --
-- 12 --
Units
S
pF
Rating
Min. Typ. Max.
-- 40 --
-- 120 --
-- 70 --
-- 80 --
-- 47
-- 10 --
-- 17 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2015V01
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CS8N80F A9D
○R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
Reverse Recovery Current
Pulse width tp≤380µs,δ≤2%
Test Conditions
IS=8.0A,VGS=0V
IS=8.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- --
8
-- --
32
-- --
1.5
-- 303 --
-- 2230 --
-- 15 --
Units
A
A
V
ns
nC
A
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
2.5
100
Units
℃/W
℃/W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1:Repetitive rating; pulse width limited by maximum junction temperature
a2:L=20.0mH, ID=5.9A, Start TJ=25℃
a3:ISD =8A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10 2015V01
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Номер в каталоге | Описание | Производители |
CS8N80FA9D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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