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Номер произв CS8N80A8H
Описание Silicon N-Channel Power MOSFET
Производители Huajing Microelectronics
логотип Huajing Microelectronics логотип 



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CS8N80A8H Даташит, Описание, Даташиты
Silicon N-Channel Power MOSFET
CS8N80 A8H
R
General Description
CS8N80 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.25)
l Low Gate Charge (Typical Data:48nC)
l Low Reverse transfer capacitances(Typical:17pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
800
8
130
1.1
Rating
800
8
5.4
32
±30
950
85
4.1
5.0
130
1.04
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1









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CS8N80A8H Даташит, Описание, Даташиты
CS8N80 A8H
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 800V, VGS= 0V,
Ta = 25
VDS =640V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
Rating
Min. Typ. Max.
800 -- --
-- 0.85 --
-- -- 25
-- -- 250
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VGS=10V,ID=4.0A
VDS = VGS, ID = 250µA
Test Conditions
VDS=15V, ID =4.0A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =8.0A VDD = 400V
VGS = 10V RG = 4.7
ID =8.0A VDD =640V
VGS = 10V
Rating
Min. Typ. Max.
-- 1.1 1.25
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 8.5 --
-- 2400 --
-- 160 --
-- 17 --
Units
S
pF
Rating
Min. Typ. Max.
-- 40 --
-- 120 --
-- 70 --
-- 80 --
-- 48
-- 11 --
-- 16 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1









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CS8N80A8H Даташит, Описание, Даташиты
CS8N80 A8H
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
Reverse Recovery Current
Pulse width tp380µs,δ≤2%
Test Conditions
IS=8.0A,VGS=0V
IS=8.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- --
8
-- --
32
-- --
1.5
-- 570 --
-- 8130 --
-- 18 --
Units
A
A
V
ns
nC
A
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
0.96
62.5
Units
/W
/W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=13.8A, Start TJ=25
a3ISD =8A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 20 15V0 1










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