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PDF TC8220 Data sheet ( Hoja de datos )
| Número de pieza | TC8220 | |
| Descripción | N- and P-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Supertex | |
| Logotipo |  |
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Supertex inc.
TC8220
Two Pair, N- and P-Channel
Enhancement-Mode MOSFET
Features
►►High voltage Vertical DMOS technology
►►Integrated gate-to-source resistor
►►Integrated gate-to-source Zener diode
►►Low threshold, Low on-resistance
►►Low input & output capacitance
►►Fast switching speeds
►►Electrically isolated N- and P-MOSFET pairs
Applications
►►High voltage pulsers
►► Amplifiers
►► Buffers
►►Piezoelectric transducer drivers
►►General purpose line drivers
►►Logic level interfaces
General Description
The Supertex TC8220 consists of two pairs of high voltage, low
threshold N-channel and P-channel MOSFETs in a 12-Lead DFN
package.All MOSFETs have integrated the gate-to-source resistors
and gate-to-source Zener diode clamps which are desired for high
voltage pulser applications. The complimentary, high-speed, high
voltage, gate-clamped N and P-channel MOSFET pairs utilize an
advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from
thermal runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
and output capacitance, and fast switching speeds are desired.
Typical Application Circuit
0.1µF
+10V
0.47µF
ENAB
1.8 to 5.0V
Logic Imputs
+PULSE
-PULSE
DAMP
OE VDD
INA
INB
VH
OUTA
OUTB
INC OUTC
OUTD
IND
GND VSS
VL
Supertex
MD1822
10nF
VPP
+100V
1.0µF
VNN
-100V
1.0µF
Supertex
TC8220
Doc.# DSFP-TC8220
B080713
Supertex inc.
www.supertex.com
1 page  
Pin Description
Pin #
1
2
3
4
5
6
Function
GN1
GP1
GN2
SN2
GP2
SP2
Description
Gate of N-MOSFET 1
Gate of P-MOSFET 1
Gate of N-MOSFET 2
Source of N-MOSFET 2
Gate of P-MOSFET 2
Source of P-MOSFET 2
Pin #
7
8
9
10
11
12
Function
DP2
DN2
SP1
DP1
DN1
SN1
Thermal Pad
Die attachment substrate, must be grounded externally
Note:
Thermal Pad must be grounded.
TC8220
Description
Drain of P-MOSFET 2
Drain of N-MOSFET 2
Source of P-MOSFET 1
Drain of P-MOSFET 1
Drain of N-MOSFET 1
Source of N-MOSFET 1
Doc.# DSFP-TC8220
B080713
Supertex inc.
5 www.supertex.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TC8220.PDF ] | |
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