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What is BFP842ESD?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Robust Low Noise Silicon Germanium Bipolar RF Transistor".


BFP842ESD Datasheet PDF - Infineon

Part Number BFP842ESD
Description Robust Low Noise Silicon Germanium Bipolar RF Transistor
Manufacturers Infineon 
Logo Infineon Logo 


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BFP842ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2013-04-11
RF & Protection Devices

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BFP842ESD equivalent
BFP842ESD
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP842ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 2.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2.5 V . . . . . . . . . . . . . . . . 16
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2.5 V . . . . . . . . . . . . . . . . . . . 16
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2.5 V . . . . . . . . . . . . . . . . . . . 17
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 , VCE, f = Parameters . . . . . . . . . 18
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 3.5 GHz . . . . . . 19
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 3.5 GHz . . . . . . . . . . 19
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 2.5 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 2.5 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 21
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 21
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA . . . . . . 22
Figure 5-17 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-18 Output Reflection Coefficient S22 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-19 Noise Figure NFmin = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-20 Noise Figure NFmin = f (IC), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24
Figure 5-21 Noise Figure NF50 = f (IC), VCE = 2.5 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP842ESD: T9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5 Revision 1.1, 2013-04-11


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Part NumberDescriptionMFRS
BFP842ESDThe function is Robust Low Noise Silicon Germanium Bipolar RF Transistor. InfineonInfineon

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