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Número de pieza | AH118 | |
Descripción | High Linearity InGaP HBT Amplifier | |
Fabricantes | WJ Communication | |
Logotipo | ||
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No Preview Available ! AH118
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
• 60 – 3500 MHz
• +24.7 dBm P1dB
• +40.5 dBm Output IP3
• 20.4 dB Gain @ 900 MHz
• 16.5 dB Gain @ 1900 MHz
• +5V Single Positive Supply
• Lead-free/Green/RoHS-
compliant SOT-89 Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
• DBS / WLL / W-LAN
• Defense / Homeland Security
Product Description
The AH118 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+40.5 dBm OIP3 and +24.7 dBm of compressed 1dB
power. The AH118 is available in a lead-free/green/RoHS-
compliant SOT-89 package. All devices are 100% RF and
DC tested.
The AH118 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. Internal biasing allows the AH118 to
maintain high linearity over temperature and operate
directly off a single +5V supply. This combination makes
the device an excellent candidate for transceiver line cards
in current and next generation multi-carrier 3G base
stations.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input / Base
Output / Collector
Ground
Pin No.
1
3
2, 4
Specifications (1)
Typical Performance (3)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Min
60
13.5
+23
+39.5
140
Typ
1900
16.5
12
20
+24.7
+40.5
+18
+16.7
4.3
160
+5
Max
3500
175
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR,
wCDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1900 2140
20.4 16.5 16.3
-15 -12 -15
-12 -20 -16
+24.2 +24.7 +24.7
+40 +40.5 +40.5
+18.2 +18
+16.7
4.0 4.3 4.8
+5 V @ 160 mA
3. Typical parameters reflect performance in a tuned application circuit: Vsupply = +5 V, 160 mA,
+25 °C
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+15 dBm
+6 V
220 mA
+250 °C
Ordering Information
Part No.
AH118-89G
AH118-89PCB900
AH118-89PCB1900
AH118-89PCB2140
Description
High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 package)
900 MHz Evaluation Board
1900 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 8 May 2006
1 page AH118
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
2140 MHz Application Circuit (AH118-89PCB2140)
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH)
Noise Figure
Device / Supply Voltage
Quiescent Current
2140 MHz
16.3 dB
15 dB
16 dB
+24.7 dBm
+40.5 dBm
+16.7 dBm
4.8 dB
+5 V
160 mA
Vcc = +5 V
All passive components are of size 0603 unless otherwise noted.
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
DIODE1
5.6 V
ID=C4
C=56 pF
ID=L2
C=1.5 pF
ID=L1
L=18 nH
ID=L3
R=0 Ohm
ID=C1
C=1e5 pF
size 1206
ID=C3
C=1000 pF
size 0805
ID=C2
C=56 pF
ID=C5
C=56 pF
ID=C6
C=1.8 pF
NET="AH118"
C6 should be placed at the silk screen
marker "F" on the WJ evaluation board.
The capacitor should be placed
32.6° @ 2.14GHz from pin 1 of the AH118
ID=C9
C=1.2 pF
C9 should be placed at the
silk screen marker '4' on the
WJ evaluation board.
The capacitor should be placed
20.5° @ 2.14GHz from pin 3
of the AH118.
S21 vs. Frequency
18
17
16
15
14
+25°C
13
2110
-40°C +85°C
2130 2150
Frequency (MHz)
S11 vs. Frequency
0
+25°C
-40°C
-5
2170
+85°C
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-35
-40
-45
-50
-55
-60
12
0
13 14 15 16 17
Output Channel Power (dBm)
S22 vs. Frequency
18
-5
-10 -10
-15
-20
2110
2130 2150
Frequency (MHz)
-15
-20
2170 2110
+25°C -40°C +85°C
2130 2150
Frequency (MHz)
2170
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 8 May 2006
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet AH118.PDF ] |
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