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AH103 PDF даташит

Спецификация AH103 изготовлена ​​​​«WJ Communication» и имеет функцию, называемую «High Linearity Amplifier».

Детали детали

Номер произв AH103
Описание High Linearity Amplifier
Производители WJ Communication
логотип WJ Communication логотип 

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AH103 Даташит, Описание, Даташиты
AH103
High Gain, High Linearity ½ Watt Amplifier
The Communications Edge TM
Product Information
Product Features
60 – 2700 MHz
+27 dBm P1dB
+46 dBm Output IP3
28.5 dB Gain @ 900 MHz
Excellent ACPR
MTTF > 100 Years
SOIC-8 Pkg w/ heat slug
Applications
Mobile Infrastructure
W-LAN / ISM / RFID
MDS / MMDS Infrastructure
Product Description
Functional Diagram
The AH103 is a high gain, high linearity ½-Watt
amplifier. This device is comprised of two individual
MMIC amplifiers internally and can be used with an
external interstage match for any of the mobile
infrastructure frequency bands. The dual-stage
amplifier achieves up to +46 dBm IP3 performance
with 28.5 dB gain.
1
2
3 AMP 1
4
AMP 2
8
7
6
5
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The AH103 has an associated MTTF of
a minimum of 100 years at a mounting temperature
of 85°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high linearity are required.
Function
Amp2 in
Amp1 out / Bias 1
Ground
RF in (Amp1 in)
RF out (Amp2 out)
Bias 2
Pin No.
1
2
3, 5, 8,
Backside copper
4
6
7
Specifications
Typical Performance
Parameter
Frequency Range (2)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (3)
IS-95 Channel Power (4)
@ -45 dBc ACPR
Noise Figure
Supply Voltage (Amp1)
Supply Voltage (Amp2)
Operating Current (Amp1)
Operating Current (Amp2)
Thermal Resistance (5)
Junction Temperature (6)
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
V
mA
mA
°C / W
°C
Min
60
26.5
+26
+43
55
170
Typ
800
28.5
20
11
+27
+46
+21
2.9
+4.5
+9
75
200
Max
2700
100
230
20.6
160
Test conditions unless otherwise noted.
1. T = 25ºC, Vdd1 = +4.5 V, Vdd2 = +9 V, Frequency = 800 MHz in a tuned application circuit.
2. The frequency of operation & bandwidth is determined by the external interstage match.
3. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability
±750 kHz offset, 30 kHz BW, Channel BW = 1.23 MHz, frequency = 880 MHz.
5. The worst-case junction temperature for a given ground tab temperature can be calculated by
multiplying the thermal resistance with the total package power dissipation and adding it to the tab
temperature. ie. At 85°C case temperature for a typical device, the worst-case junction temperature
would be = 85°C + (9 V * 0.2 A + 4.5 V * 0.075 A) = 129°C.
6. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Parameter Units
Typical
Frequency
MHz 900 1900 2140 2400
S21
dB 28.5 26
25 24.7
S11 dB -15 -12 -11 -12
S22 dB -11 -11 -14 -17
Output P1dB
dBm +27 +26.5 +26.5 +26
Output IP3
Channel Power
@ -45 dBc ACPR / ACLR
Noise Figure
dBm
dBm
dB
+46
+21
2.9
+45 +45 +43.3
+20 +17.2
3.7 3.5 3.6
Supply Bias 1
+4.5 V @ 75 mA
Supply Bias 2
+9 V @ 200 mA
7. Typical parameters reflect performance in an application circuit.
8. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage (pin 2)
DC Voltage (pin 6, 7)
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
+6 V
+11 V
4 dB above Input P1dB
+220°C
Part No.
AH103
AH103-PCB900
AH103-PCB1750
AH103-PCB1900
AH103-PCB2140
Description
High Gain ½ Watt Amplifier
(available in tape and reel)
0.7 – 1.0 GHz Evaluation Circuit
1.7 – 1.8 GHz Evaluation Circuit
1.8 – 2.0 GHz Evaluation Circuit
2.1 – 2.2 GHz Evaluation Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
November 2003









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AH103 Даташит, Описание, Даташиты
AH103
High Gain, High Linearity ½ Watt Amplifier
The Communications Edge TM
Product Information
Application Circuit
Notes:
1. DNP = Do not place this component.
2. Distance “D1” measured from U1, pin 4 to edge of Cx (where x = 2, 3, or 4).
a. D1 = 0.620” to C2 (for use with AH103-PCB1750)
The 2.0 pF input tuning capacitor is placed .045” to the left of “C2” shown on the silk
screen. The shunt capacitor is placed directly on the right and adjacent to the input
blocking capacitor C1.
b. D1 = 0.450” to C3 (for use with AH103-PCB1900)
c. D1 = 0.310” to C4 (for use with AH103-PCB2140)
3. A voltage regulator is used in this circuit (U2) to drop the +9 V to a +5 V usable supply for the first
internal amplifier. It is permissible to remove the regulator and operate the 1st amplifier stage
directly off of +5 V supply onto Test Point 1 (TP1). The use of a +5 V supply on the 1st amplifier
stage requires a dropping resistor of 6.8 .
4. A +4.5 V supply can also be used to bypass the 6.8 and can be applied to Test Point 2 (TP2).
Evaluation Board PCB Layout
Bill of Materials
All Application Circuits
Ref. Desig.
Component
R1 6.8 chip resistor
L2, L3
18 nH chip inductor
C6, C10, C12 .018 µF chip capacitor
U1 WJ AH103 Amplifier
+5V Regulator,
U2 National Semiconductor
NJM78L05
5. All components are of size 0603.
6. Other components not shown above are specific
for the frequency band of interest.
AH103-PCB900
700 – 1000 MHz App. Circuit
Ref. Desig.
Component
L1 10 nH chip inductor
L4 5.6 nH chip inductor
C1 0 chip resistor
C5, C11
5.6 pF chip capacitor
C7 10 pF chip capacitor
C9 1.5 pF chip capacitor
C2, C3, C4, C8 DNP
AH103-PCB1750
1700 – 1800 MHz App. Circuit
Ref. Desig.
Component
C1, C11
47 pF chip capacitor
C2 2.0 pF chip capacitor
C5 0 chip resistor
C8 10 pF chip capacitor
C3, C4, C7
C9, L1, L4
DNP
See note (2a) for the proper placement of C2.
AH103-PCB1900
1800 – 2000 MHz App. Circuit
Ref. Desig.
Component
C1, C11
47 pF chip capacitor
C3 1.5 pF chip capacitor
C5 0 chip resistor
C8 10 pF chip capacitor
C2, C4, C7
C9, L1, L4
DNP
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
AH103-PCB2140
2110 – 2140 MHz App. Circuit
Ref. Desig.
Component
C1, C11
47 pF chip capacitor
C4 1.2 pF chip capacitor
C5 0 chip resistor
C8 10 pF chip capacitor
C2, C3. C7
C9, L1, L4
DNP
2.4 – 2.7 GHz Reference Circuit
Ref. Desig.
Component
L1 1 pF chip capacitor
C1 0 chip resistor
C5 22 pF chip capacitor
C8 10 pF chip capacitor
C11 47 pF chip capacitor
C2, C3. C4
C7, C9, L4
DNP
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
November 2003









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AH103 Даташит, Описание, Даташиты
AH103
High Gain, High Linearity ½ Watt Amplifier
The Communications Edge TM
Product Information
Application Circuit: 700 – 1000 MHz
(AH103-PCB900)
Application Circuit: 1.8 – 2.0 GHz
(AH103-PCB1900)
Typical RF Performance
Frequency
880 MHz
S21 – Gain
28.5 dB
S11 – Input Return Loss -15 dB
S22 – Output Return Loss -11 dB
Output P1dB
+27 dBm
Output IP3
(+10 dBm / tone, 1 MHz spacing)
IS-95 Channel Power
@ -45 dBc ACPR
Noise Figure
+45 dBm
+21 dBm
2.9 dB
Supply Bias (Amp 1)
+4.5 V @ 75 mA
Supply Bias (Amp 2)
+9 V @ 200 mA
Typical RF Performance
Frequency
1960 MHz
S21 – Gain
26 dB
S11 – Input Return Loss -12 dB
S22 – Output Return Loss -11 dB
Output P1dB
+26.5 dBm
Output IP3
(+10 dBm / tone, 1 MHz spacing)
IS-95 Channel Power
@ -45 dBc ACPR
Noise Figure
+45 dBm
+20 dBm
3.7 dB
Supply Bias (Amp 1)
+4.5 V @ 75 mA
Supply Bias (Amp 2)
+9 V @ 200 mA
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
0.6
S-Parameters
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
0.7 0.8 0.9
1
Frequency (GHz)
1.1 1.2
30
25
20
15
10
5
0
-5
-10
-15
-20
1.6
S-Parameters
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
1.7 1.8 1.9
2
Frequency (GHz)
2.1 2.2
880 MHz ACPR vs Channel Power
Single Carrier and 4-Carrier IS-95
-30
-35
-40
-45
-50
-55
-60
-65
-70 Single Carrier
-75 4 Carrier
-80
10 12 14 16 18
Channel Output Power (dBm)
20
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
10
1960 MHz ACPR vs Channel Power
Single Carrier and 4-Carrier IS-95
Single Carrier
4 Carrier
12 14 16 18
Channel Output Power (dBm)
20
Single Carrier Signal:
Single Carrier Signal:
IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability
±750 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz
±885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz
Four-Carrier Signal:
Four-Carrier Signal:
IS-95, 9 Channels Forward, Pk/Avg Ratio = 10.2 dB at a .001% probability IS-95, 9 Channels Forward, Pk/Avg Ratio = 10.2 dB at a .001% probability
±2.60 MHz offset, 30 kHz bandwidth, Channel BW = 4.92 MHz
±2.76 MHz offset, 30 kHz bandwidth, Channel BW = 4.98 MHz
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
November 2003










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