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2P4M PDF даташит

Спецификация 2P4M изготовлена ​​​​«Thinki Semiconductor» и имеет функцию, называемую «2.0 Ampere Passivated Process Thyristor».

Детали детали

Номер произв 2P4M
Описание 2.0 Ampere Passivated Process Thyristor
Производители Thinki Semiconductor
логотип Thinki Semiconductor логотип 

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2P4M Даташит, Описание, Даташиты
2P4M
®
2P4M
Pb Free Plating Product
Pb
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
DESCRIPTION:
ThinkiSemi 2P4M SCR with the parallel resistor
between Gate and Cathode are especially
recommended for use on straight hair, igniter,
anion generator etc..
MAIN FEATURES
TO-202 Pkg Outline
Symbol
Value
IT(RMS)
IGT
VTM
2
200
1.5
ABSOLUTE MAXIMUM RATINGS
Unit
A
μA
V
Internal structure
A(2)
K(1)
RGK
G(3)
3
2
1
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Symbol
Tstg
Tj
VDRM
VRRM
Value
-40-150
-40-110
600
600
Unit
V
V
RMS on-state current
@ (TC=72) IT(RMS)
2
A
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110)
Peak gate power (tp=20μs, Tj=110)
Average gate power dissipation(Tj=110)
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
20 A
2 A2s
50 As
0.2 A
0.5 W
0.1 W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/









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2P4M Даташит, Описание, Даташиты
2P4M
®
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP. MAX.
IGT VD=12V RL=33Ω
VGT
- 40 200
- 0.5 0.8
VGD VD=VDRM Tj=110
0.2 -
-
IL IG=1.2 IGT
- -3
IH
dV/dt
IT=0.05A
VD=60%VDRM Tj=110RGK=1KΩ
-
10
-
-
2
-
Unit
μA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=4A tp=380μs
Tj=25
VD=VDRM VR=VRRM
Tj=25
Tj=110
Value(MAX)
1.5
5
100
Unit
V
μA
μA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) junction to case
TO-202 Heat sink
Value
10
Unit
/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/3
http://www.thinkisemi.com/









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2P4M Даташит, Описание, Даташиты
2P4M
®
FIG.1 Maximum power dissipation versus RMS
on-state current
P(w)
3
2
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
3
α=180°
TO-202
2
11
0
0 0.5
IT(RMS) (A)
1 1.5
2 2.5
FIG.3: Surge peak on-state current versus
number of cycles
ITSM (A)
21
18
tp=10ms
One cycle
15
12
9
6
3
0 Number of cycles
1 10 100
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2t (dI/dt < 50A/μs)
ITSM (A), I2t (A2 s)
300
100
dI/dt
10
ITSM
1
0.01
I2t
tp(ms)
0.1 1
10
0 Tc ()
0 25 50 75 100 125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
20
10 Tj=Tjmax
1
Tj=25
0.1 VTM (V)
01 23 45
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25)
3.0
2.5
2.0 IGT
1.5 IH&IL
1.0
0.5
0.0
-40
Tj()
0 40 80
120
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/3
http://www.thinkisemi.com/










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