2SCR574D PDF даташит
Спецификация 2SCR574D изготовлена «ROHM Semiconductor» и имеет функцию, называемую «NPN 2.0A 80V Middle Power Transistor». |
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Детали детали
Номер произв | 2SCR574D |
Описание | NPN 2.0A 80V Middle Power Transistor |
Производители | ROHM Semiconductor |
логотип |
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2SCR574D
NPN 2.0A 80V Middle Power Transistor
Parameter
VCEO
IC
Value
80V
2A
lFeatures
1) Suitable for Middle Power Driver.
2) Complementary PNP Types : 2SAR574D.
3) Low VCE(sat)
VCE(sat)=300mV(Max.).
(IC/IB=1A/50mA)
lOutline
CPT
TO-252
SC-63
lInner circuit
Datasheet
lApplication
LOW FREQUENCY AMPLIFIER
lPackaging specifications
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
2SCR574D
CPT 6595
TL
330
16
2500 CR574
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© 2015 ROHM Co., Ltd. All rights reserved.
1/6
20150730 - Rev.001
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2SCR574D
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
IB
PD*2
Tj
Tstg
Values
80
80
6
2
4
0.5
10
150
-55 to +150
Unit
V
V
V
A
A
A
W
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Collector-base breakdown
voltage
BVCBO IC = 100μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage BVEBO IE = 100μA
Collector cut-off current
ICBO VCB = 80V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC = 1A, IB = 50mA
DC current gain
hFE VCE = 3V, IC = 100mA
Transition frequency
f T*3
VCE = 10V, IE = -500mA,
f = 100MHz
80
80
6
-
-
-
120
-
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
Values
Typ.
-
-
-
-
-
100
-
280
20
Max.
-
-
-
1
1
300
390
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
ton IC = 1A,
IB1 = 100mA,
tstg
IB2 = -100mA,
VCC ⋍ 10V,
RL = 10Ω
tf See test circuit
- 90 -
- 600 -
- 150 -
ns
ns
ns
*1 Pw=10ms Single Pulse
*2 Tc=25℃
*3 PULSED
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© 2015 ROHM Co., Ltd. All rights reserved.
2/6
20150730 - Rev.001
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2SCR574D
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded Emitter Propagation
Characteristics
Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/6
20150730 - Rev.001
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Номер в каталоге | Описание | Производители |
2SCR574D | NPN 2.0A 80V Middle Power Transistor | ROHM Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |