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2SB1204 PDF даташит

Спецификация 2SB1204 изготовлена ​​​​«Inchange Semiconductor» и имеет функцию, называемую «Silicon PNP Power Transistor».

Детали детали

Номер произв 2SB1204
Описание Silicon PNP Power Transistor
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 

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2SB1204 Даташит, Описание, Даташиты
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1204
DESCRIPTION
·High current and high fT
·Small and slim package making it easy to make 2SB1204-used set smaller
·Low collector-to-emitter saturation voltage
·Excellent linearity of hFE
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·relay drivers,high speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -8 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
Tstg Storage Temperature Range
-12 A
20 W
1.0 W
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark









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2SB1204 Даташит, Описание, Даташиты
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1204
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -200mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -200mA
V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10uA; IC= 0
ICBO Collector Cutoff Current
VCB= -40V; IE= 0
IEBO Emitter Cutoff Current
VEB= -4V; IC= 0
hFE1 DC Current Gain
IC= -0.5A; VCE= -2V
hFE2 DC Current Gain
IC= -6A; VCE= -2V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
-0.5 V
-1.3 V
-60 V
-50 V
-6 V
-1 uA
-1 uA
70 400
35
95 pF
130 MHz
hFE1 Classifications
QRS
T
70-140 100-200 140-280 200-400
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark









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2SB1204 Даташит, Описание, Даташиты
isc Silicon PNP Power Transistor
Outline Drawing
INCHANGE Semiconductor
2SB1204
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark










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