BUS22 PDF даташит
Спецификация BUS22 изготовлена «Inchange Semiconductor» и имеет функцию, называемую «Silicon NPN Power Transistor». |
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Детали детали
Номер произв | BUS22 |
Описание | Silicon NPN Power Transistor |
Производители | Inchange Semiconductor |
логотип |
2 Pages
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isc Silicon NPN Power Transistors
isc Product Specification
BUS22
DESCRIPTION
High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V (Min)
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- EmitterVoltage(VBE= 0)
550
V
VCEO
Collector-Emitter Voltage
300 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
6
125
200
-65~200
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.4 ℃/W
·
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
No Preview Available ! |
isc Silicon NPN Power Transistors
isc Product Specification
BUS22
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICES Collector Cutoff Current
VCE=VCESMmax; VBE= 0
IEBO Emitter Cutoff Current
VEB= 9V; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 5V
Switching Times , Resistive Load
ton Turn-On Time
tstg Storage Time
IC= 6A ;IB1= -IB2= 1.2A
tf Fall Time
MIN TYP. MAX UNIT
300 V
1.5 V
1.5 V
1 mA
1 mA
18
0.5 μs
3.0 μs
0.3 μs
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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Номер в каталоге | Описание | Производители |
BUS22 | Silicon NPN Power Transistor | Inchange Semiconductor |
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