(PDF) BUS131 Datasheet - Silicon NPN Power Transistor

Número de pieza	BUS131
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS131/A DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS131 BUS131A 850 1000 V VCEO Collector-Emitter Voltage BUS131 BUS131A 450 500 V VEBO IC ICM IB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 5 10 4 8 125 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF BUS131 Data sheet ( Hoja de datos )