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PDF BUR52 Data sheet ( Hoja de datos )
| Número de pieza | BUR52 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUR52
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min)
·High Current Capability
·Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 25A
APPLICATIONS
·Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
350 V
VCEO(SUS) Collector-Emitter Voltage
250 V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
ICM Collector Current-Peak
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=100℃
TJ Junction Temperature
Tstg Storage Temperature
60 A
80 A
16 A
350 W
200 ℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.5
UNIT
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUR52.PDF ] | |
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