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PDF BUL903ED Data sheet ( Hoja de datos )
| Número de pieza | BUL903ED | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL903ED
DESCRIPTION
·INTEGRATED ANTISATURATION AND
PROTECTIONNETWORK
·INTEGRATED ANTIPARALLELCOLLECTOR
EMITTER DIODE
·HIGH VOLTAGECAPABILITY
·LOW SPREADOF DYNAMIC PARAMETERS
·MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
·VERYHIGH SWITCHING SPEED
·ARCING TEST SELFPROTECTED
APPLICATIONS
·LAMP ELECTRONIC BALLASTFOR
FLUORESCENT LIGHTINGUSING 277V
HALF BRIDGECURRENT-FED
CONFIGURATION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage (VBE = 0)
900
VCEO
Collector-Emitter Voltage(IB = 0)
400
VEBO
Emitter-Base Voltage (IC = 0)
7
IC Collector Current-Continuous
5
ICM Collector Peak Current (tp <5 ms)
8
IB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
2
70
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.8 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL903ED.PDF ] | |
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