BUL57 Datasheet PDF - Inchange Semiconductor
| Part Number | BUL57 | |
| Description | Silicon NPN Power Transistor | |
| Manufacturers | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL57
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.65V(Max) @ IC= 2A
·High Speed Switching
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-peak
16 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
PC
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
7
85
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.5 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUL57 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUL57.PDF Datasheet ] | |
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