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PDF BUL128D Data sheet ( Hoja de datos )
| Número de pieza | BUL128D | |
| Descripción | HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR | |
| Fabricantes | TGS | |
| Logotipo |  |
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TIGER ELECTRONIC CO.,LTD
Product specification
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
BUL128D
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■
APPLICATIONS
■ ELECTRONIC BALLASTS FOR FLUORESCENT
LIGHTING
■ FLYBACK AND FORWARD SINGLE
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage
capability. It uses a Cellular Emitter structure
with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
ABSOLUTE MAXIMUM RATINGS
Parameter
ol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Value Unit
700 V
400 V
9.0 V
4.0 A
2.0 A
70 W
150 oC
-65~150 oC
TO-220AB
(Tcase = 25 ℃ unless otherwise specified)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
Emitter-Base BreakdownVoltage
(IC=0)
Symbol Test Conditions
ICES VCE=700V, IE=0
IEBO VEB=9V, IC=0
VCEO IC=100mA, IB=0
BVEBO IE=10mA
Min.
—
—
400
Typ.
—
—
—
9—
DC Current Gain
hFE(1)
hFE(2)
VCE=5V, IC=2.0A
VCE=5V, IC=10mA
12 —
10 —
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1.0A,IB=0.2A
IC =4.0A, IB=1.0A
——
— 0.5
Base-Emitter Saturation Voltage
Storage Time
VBE(sat)
TS
IC=1.0A,IB=0.2A
IC =2.5A,IB=0.5A
IC=2.0A IB1=-IB2=0.4A
——
——
2.0 —
Max. Unit
0.25 mA
0.1 mA
—V
18 V
32
—
1.0
V
—
1.2
V
1.3
2.9 us
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BUL128D.PDF ] | |
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