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BD204 PDF даташит

Спецификация BD204 изготовлена ​​​​«Inchange Semiconductor» и имеет функцию, называемую «Silicon PNP Power Transistor».

Детали детали

Номер произв BD204
Описание Silicon PNP Power Transistor
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 

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BD204 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD202
-60V(Min)- BD204
·Complement to Type BD201/203
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BD202
-60
VCBO
Collector-Base Voltage
V
BD204
-60
BD202
-45
VCEO
Collector-Emitter Voltage
V
BD204
-60
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8 A
ICM Collector Current-Peak tp10ms -12 A
ICSM Collector Current-Peak tp2ms
-25 A
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-3 A
60 W
150
Tstg Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
2.08 /W
Thermal Resistance, Junction to Ambient 70 /W
isc Product Specification
BD202/204
isc websitewww.iscsemi.cn
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BD204 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD202/204
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD202
BD204
IC= -0.2A ;IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ;IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= -3A ; VCE= -2V
VCE= -30V; IB= 0
VCB= -40V;IE= 0; TJ= 150
VEB= -5V; IC=0
hFE DC Current Gain
BD202
BD204
fT Current-Gain—Bandwidth Product
Switching Times
IC= -3A ; VCE= -2V
IC= -2A ; VCE= -2V
IC= -0.3A ; VCE= -3V, ftest= 1.0MHz
ton Turn-On Time
toff Turn-Off Time
IC= -2A; IB1= -IB2= -0.2A
MIN MAX UNIT
-45
V
-60
-60 V
-5 V
-1.0 V
-1.5 V
-2.0 V
-1.5 V
-0.2 mA
-1.0 mA
-0.5 mA
30
7.0 MHz
1 μs
2 μs
isc websitewww.iscsemi.cn
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