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Número de pieza | IRFP150N | |
Descripción | N-Channel MOSFET Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFP150N (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP150N
Features
·Drain Current –ID= 42A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.036Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
100 V
±20
V
42 A
140 A
160 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.95
40
UNIT
℃/W
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IRFP150N.PDF ] |
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