NSVBCP69T1G PDF даташит
Спецификация NSVBCP69T1G изготовлена «ON Semiconductor» и имеет функцию, называемую «PNP Silicon Epitaxial Transistor». |
|
Детали детали
Номер произв | NSVBCP69T1G |
Описание | PNP Silicon Epitaxial Transistor |
Производители | ON Semiconductor |
логотип |
4 Pages
No Preview Available ! |
BCP69T1G, NSVBCP69T1G
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
• High Current: IC = −1.0 A
• The SOT−223 Package Can Be Soldered Using Wave or Reflow.
• SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
• NPN Complement is BCP68
• AEC−Q101 Qualified and PPAP Capable
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
− 20
− 25
− 5.0
−1.0
1.5
12
Vdc
Vdc
Vdc
Adc
W
mW/°C
Operating and Storage Temperature Range
TJ, Tstg − 65 to
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance − Junction−to−Ambient
(Surface Mounted)
RqJA
83.3 °C/W
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
TL 260 °C
10 s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
http://onsemi.com
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
3
SOT−223 (TO−261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
CEG
G
CE = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BCP69T1G
SOT−223 1000 / Tape & Reel
(Pb−Free)
NSVBCP69T1G SOT−223 1000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1
Publication Order Number:
BCP69T1/D
No Preview Available ! |
BCP69T1G, NSVBCP69T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
Collector−Base Cutoff Current (VCB = − 25 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
IEBO
− 25
− 20
− 5.0
−
−
−
−
−
−
−
− Vdc
− Vdc
− Vdc
−10 mAdc
−10 mAdc
DC Current Gain
(IC = − 5.0 mAdc, VCE = −10 Vdc)
(IC = − 500 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 Adc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc)
Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
50
85
60
−
−
−
−−
− 375
−−
−
− 0.5
Vdc
−
−1.0
Vdc
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc)
fT − 60 − MHz
TYPICAL ELECTRICAL CHARACTERISTICS
400
150°C
300
VCE = 1 V
300
200
200 25°C
−55°C
100
100
VCE = -10 V
70 TJ = 25°C
f = 30 MHz
50
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
10 30-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
Figure 2. Current Gain Bandwidth Product
http://onsemi.com
2
No Preview Available ! |
BCP69T1G, NSVBCP69T1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.35
0.30
0.25
IC/IB = 10
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1
1.4
IC/IB = 10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10
1.2
1.1 VCE = 1 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Voltage vs. Collector
Current
160
120
80
40
0
Cob
Cib
TJ = 25°C
Cib
Cob
- 5.0 -1.0
-1.0 - 2.0
-1.5 - 2.0
- 3.0 - 4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
- 2.5
- 5.0
10
10 ms
1 s 100 ms
1 ms
1.0
Thermal Limit
0.1
Single Pulse Test
@ TA = 25°C
0.01
0.1
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Safe Operating Area
100
http://onsemi.com
3
Скачать PDF:
[ NSVBCP69T1G.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NSVBCP69T1G | PNP Silicon Epitaxial Transistor | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |