DataSheet26.com

NSVBCP69T1G PDF даташит

Спецификация NSVBCP69T1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «PNP Silicon Epitaxial Transistor».

Детали детали

Номер произв NSVBCP69T1G
Описание PNP Silicon Epitaxial Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

4 Pages
scroll

No Preview Available !

NSVBCP69T1G Даташит, Описание, Даташиты
BCP69T1G, NSVBCP69T1G
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT223 package, which is designed for medium power surface
mount applications.
Features
High Current: IC = 1.0 A
The SOT223 Package Can Be Soldered Using Wave or Reflow.
SOT223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
NPN Complement is BCP68
AECQ101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current
Total Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
20
25
5.0
1.0
1.5
12
Vdc
Vdc
Vdc
Adc
W
mW/°C
Operating and Storage Temperature Range
TJ, Tstg 65 to
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance JunctiontoAmbient
(Surface Mounted)
RqJA
83.3 °C/W
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
TL 260 °C
10 s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
http://onsemi.com
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
3
SOT223 (TO261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
CEG
G
CE = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BCP69T1G
SOT223 1000 / Tape & Reel
(PbFree)
NSVBCP69T1G SOT223 1000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 11
1
Publication Order Number:
BCP69T1/D









No Preview Available !

NSVBCP69T1G Даташит, Описание, Даташиты
BCP69T1G, NSVBCP69T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 100 mAdc, IE = 0)
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
CollectorBase Cutoff Current (VCB = 25 Vdc, IE = 0)
EmitterBase Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
IEBO
25
20
5.0
Vdc
Vdc
Vdc
10 mAdc
10 mAdc
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
50
85
60
−−
375
−−
0.5
Vdc
1.0
Vdc
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
fT 60 MHz
TYPICAL ELECTRICAL CHARACTERISTICS
400
150°C
300
VCE = 1 V
300
200
200 25°C
55°C
100
100
VCE = -10 V
70 TJ = 25°C
f = 30 MHz
50
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
10 30-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
Figure 2. Current Gain Bandwidth Product
http://onsemi.com
2









No Preview Available !

NSVBCP69T1G Даташит, Описание, Даташиты
BCP69T1G, NSVBCP69T1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.35
0.30
0.25
IC/IB = 10
150°C
0.20
25°C
0.15
0.10
55°C
0.05
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1
1.4
IC/IB = 10
1.2
1.0
55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10
1.2
1.1 VCE = 1 V
1.0
0.9 55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Voltage vs. Collector
Current
160
120
80
40
0
Cob
Cib
TJ = 25°C
Cib
Cob
- 5.0 -1.0
-1.0 - 2.0
-1.5 - 2.0
- 3.0 - 4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
- 2.5
- 5.0
10
10 ms
1 s 100 ms
1 ms
1.0
Thermal Limit
 0.1
Single Pulse Test
@ TA = 25°C
0.01
0.1
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Safe Operating Area
100
http://onsemi.com
3










Скачать PDF:

[ NSVBCP69T1G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NSVBCP69T1GPNP Silicon Epitaxial TransistorON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск