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PDF 7N60 Data sheet ( Hoja de datos )

Número de pieza 7N60
Descripción N-Channel Power MOSFET / Transistor
Fabricantes yecheng technology 
Logotipo yecheng technology Logotipo

7N60 mosfet transistor


1. 600V, 7.4A, N-Ch, Power MOSFET






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No Preview Available ! 7N60 Hoja de datos, Descripción, Manual

Shenzhen yecheng technology industry co.,ltd
7N60
N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
ITO-220
PIN1 G !
PIN2 D
!
"
!"
"
"
!
PIN3 S
Value
600
±30
7
30.8
580
62.5
-55 ~+150
260
Unit
V
A
mJ
/W
1

1 page





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