MTE030N15RH8 PDF даташит
Спецификация MTE030N15RH8 изготовлена «CYStech Electronics» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | MTE030N15RH8 |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | CYStech Electronics |
логотип |
10 Pages
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C838H8
Issued Date : 2016.09.08
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE030N15RH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=4.6A
VGS=6V, ID=3.9A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
150V
24.7A
5.5A
29.3mΩ
33.6mΩ
Symbol
MTE030N15RH8
G:Gate D:Drain S:Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB030N15RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE030N15RH8
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C838H8
Issued Date : 2016.09.08
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Continuous Drain Current @ TA=85°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=22A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
TC=100℃
Total Power Dissipation
TA=25°C
TA=70°C
TA=85°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
10s Steady State
150
±20
24.7
15.6
8.3 5.5
6.6 4.4
6.0 4.0
83 *1
55
242
5 *2
50
20
5.7 2.5
4.0 1.8
3.6 1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
(Note 2)
Thermal Resistance, Junction-to-case
t≤10s
Steady State
Symbol
RθJA
RθJC
Typical
18
42
2.2
Maximum
22
50
2.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=1mH, IAS=10A, VGS=10V, VDD=50V
MTE030N15RH8
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C838H8
Issued Date : 2016.09.08
Revised Date :
Page No. : 3/10
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Rg
150
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
11.8
-
-
-
29.3
33.6
1871
106
11.7
47.9
8.5
5.5
20.4
19.6
43.2
10.6
1.2
-
4
-
±100
1
25
38
47
-
-
-
-
-
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=5A
nA VGS=±20V
μA
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
mΩ
VGS =10V, ID=4.6A
VGS =6V, ID=3.9A
pF VGS=0V, VDS=80V, f=1MHz
nC VDS=80V, VGS=10V, ID=15A
ns
VDD=75V, ID=4.6A, VGS=10V,
RG=3Ω
Ω f=1MHz
Source-Drain Diode
IS *1
-
ISM *3
-
VSD *1
-
-
trr -
Qrr -
- 24.7
- 83
0.75 1.2
0.78 1.3
56 -
117 -
A
V
ns
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=2A, VGS=0V
IS=4.6A, VGS=0V
IF=4.6A, dIF/dt=100A/μs
MTE030N15RH8
CYStek Product Specification
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Номер в каталоге | Описание | Производители |
MTE030N15RH8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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