|
|
PDF MTB04N03H8 Data sheet ( Hoja de datos )
| Número de pieza | MTB04N03H8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB04N03H8 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 1/11
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03H8 BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=25A
30V
75A
3.2 mΩ(typ)
4.9 mΩ(typ)
Description
The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
MTB04N03H8
Outline
Pin 1
DFN5×6
G：Gate
D：Drain
S：Source
MTB04N03H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 5/11
Typical Characteristics
Typical Output Characteristics
160
10V, 9V, 8V, 7V, 6V, 5V
120 VGS=4V
80
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
40 VGS=3V
VGS=2V
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
0.6
0.4
-100
ID=250μA,
VGS=0V
-50 0 50 100 150
Tj, Junction Temperature(°C)
200
Reverse Drain Current vs Source-Drain Voltage
1.2
100 VGS=2.5V
VGS=3V
10
VGS=4.5V
1
0.01
VGS=10V
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=30A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=125°C
0.4
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=30A
2
1.6
1.2
0.8
RDS(ON)@Tj=25°C : 3.2 mΩ
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
MTB04N03H8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
DFN5×6 Dimension (N Forming)
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 11/11
Marking:
Device Name
Date Code
B04
N03
8-8L-eLaedadpDowFNer5×p6akPlPaslatisctiPcaPckaacgkeage
CCYYStSekPaPcakcagkeagCeodCeo:dHe8: H8
DIM
Millimeters
Min. Max.
Inches
Min. Max.
DIM
Millimeters
Min. Max.
Inches
Min. Max.
A
0.90
1.00
0.035 0.039
E2
3.18
3.54 0.125 0.139
b
0.35
0.45 0.014 0.018
H
0.51
0.71 0.020 0.028
c
0.21
0.34 0.008 0.013
K
1.10
- 0.043 -
D
-
5.10
-
0.201
L
0.51
0.71 0.020 0.028
D1 4.80
5.00
0.189 0.197
L1
0.06
0.20 0.002 0.008
D2 3.82
4.02
0.150 0.158
L2
-
0.10
- 0.004
e
1.17
1.37 0.046 0.054
p
1.00
1.20 0.039 0.047
E 5.90 6.10 0.232 0.240 θ 8° 12° 8° 12°
E1 5.70 5.80 0.224 0.228
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB04N03H8
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTB04N03H8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB04N03H8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |