2SA1649-Z PDF даташит
Спецификация 2SA1649-Z изготовлена «Inchange Semiconductor» и имеет функцию, называемую «Silicon PNP Power Transistor». |
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Детали детали
Номер произв | 2SA1649-Z |
Описание | Silicon PNP Power Transistor |
Производители | Inchange Semiconductor |
логотип |
2 Pages
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1649-Z
DESCRIPTION
·Available for high-current control in small dimension
·Low collector saturation voltage:
VCE(sat)= -0.3V(Max)@ IC= -3A
·Fast switching speed
·High DC current gain and excellent linearity
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous -10 A
ICM Collector Current-Peak NOTE1
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃ NOTE2
TJ Junction Temperature
-20 A
15
W
1.0
150 ℃
Tstg Storage Temperature Range
-55~150
℃
NOTE1:PW≤300ms,Duty cycle ≤10%
NOTE2:Printing boarding mounted
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
No Preview Available ! |
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1649-Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A; IB= -200mA
VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -300mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= -3A; IB= -200mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= -4A; IB= -300mA
ICBO Collector Cutoff Current
VCB= -30V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1NOTE
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2NOTE
DC Current Gain
IC= -2A; VCE= -2V
hFE-3NOTE
DC Current Gain
IC= -4A; VCE= -2V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= -500mA; VCE= -10V
hFE-1 Classifications
ML K
100-200 150-300 200-400
MIN TYP. MAX UNIT
-0.3 V
-0.5 V
-1.2 V
-1.5 V
-10 μA
-10 μA
100
100 400
60
250 pF
120 MHz
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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Номер в каталоге | Описание | Производители |
2SA1649-Z | Silicon PNP Power Transistor | Inchange Semiconductor |
2SA1649-Z | PNP Silicon Power Transistor | NEC |
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