2SA1242 PDF даташит
Спецификация 2SA1242 изготовлена «Inchange Semiconductor» и имеет функцию, называемую «Silicon PNP Power Transistor». |
|
Детали детали
Номер произв | 2SA1242 |
Описание | Silicon PNP Power Transistor |
Производители | Inchange Semiconductor |
логотип |
3 Pages
No Preview Available ! |
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1242
DESCRIPTION
·hFE=100-320(IC= -0.5A; VCE= -2V)
·hFE=70(Min)(IC= -4A; VCE= -2V)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A)
··High Power Dissipation-
: PC= 10W@TC=25℃,PC= 10W@Ta=25℃
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·For medium power amplifier and strobe flash applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35 V
VCEO
Collector-Emitter Voltage
-20 V
VEBO
Emitter-Base Voltage
-8 V
IC Collector Current-Continuous -5 A
ICM Collector Current-Peak
-8 A
IB Base Current
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ Junction Temperature
-0.5 A
10
W
1.0
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
No Preview Available ! |
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1242
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -2V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
ICBO Collector Cutoff Current
VCB= -35V; IE= 0
IEBO Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -4A; VCE= -2V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -2V
MIN TYP. MAX UNIT
-1.0 V
-1.5 V
-20 V
-8 V
-0.1 μA
-0.1 μA
100 320
70
62 pF
170 MHz
hFE Classifications
OY
100-200 160-320
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
No Preview Available ! |
isc Silicon PNP Power Transistor
Outline Drawing
INCHANGE Semiconductor
2SA1242
isc website:www.iscsemi.com
3 isc & iscsemi is registered trademark
Скачать PDF:
[ 2SA1242.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2SA1241 | TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) | Toshiba Semiconductor |
2SA1242 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1242 | Silicon PNP Power Transistor | Inchange Semiconductor |
2SA1244 | TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) | Toshiba Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |