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2SA1242 PDF даташит

Спецификация 2SA1242 изготовлена ​​​​«Inchange Semiconductor» и имеет функцию, называемую «Silicon PNP Power Transistor».

Детали детали

Номер произв 2SA1242
Описание Silicon PNP Power Transistor
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 

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2SA1242 Даташит, Описание, Даташиты
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1242
DESCRIPTION
·hFE=100-320(IC= -0.5A; VCE= -2V)
·hFE=70(Min)(IC= -4A; VCE= -2V)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A)
··High Power Dissipation-
: PC= 10W@TC=25,PC= 10W@Ta=25
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·For medium power amplifier and strobe flash applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35 V
VCEO
Collector-Emitter Voltage
-20 V
VEBO
Emitter-Base Voltage
-8 V
IC Collector Current-Continuous -5 A
ICM Collector Current-Peak
-8 A
IB Base Current
Collector Power Dissipation
PC
@ TC=25
Collector Power Dissipation
@Ta=25
TJ Junction Temperature
-0.5 A
10
W
1.0
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark









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2SA1242 Даташит, Описание, Даташиты
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1242
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -2V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
ICBO Collector Cutoff Current
VCB= -35V; IE= 0
IEBO Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -4A; VCE= -2V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -2V
MIN TYP. MAX UNIT
-1.0 V
-1.5 V
-20 V
-8 V
-0.1 μA
-0.1 μA
100 320
70
62 pF
170 MHz
hFE Classifications
OY
100-200 160-320
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark









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2SA1242 Даташит, Описание, Даташиты
isc Silicon PNP Power Transistor
Outline Drawing
INCHANGE Semiconductor
2SA1242
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark










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