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Número de pieza | STI18NM60N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STI18NM60N (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! STB18NM60N, STF18NM60N, STI18NM60N
STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET
in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
Order codes
VDSS
(@Tjmax)
RDS(on)
max.
ID
PW
STB18NM60N
STF18NM60N
STI18NM60N
STP18NM60N
STW18NM60N
650 V
110 W
30 W
< 0.285 Ω 13 A
110 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB18NM60N
STF18NM60N
STI18NM60N
STP18NM60N
STW18NM60N
Marking
18NM60N
18NM60N
18NM60N
18NM60N
18NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 15868 Rev 3
1/18
www.st.com
18
1 page STB/F/I/P/W18NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 13 A, VGS=0
13 A
-
52 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =13 A, di/dt =100 A/µs,
300
VDD = 60 V
- 4.0
(see Figure 19)
25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 60 V
360
di/dt =100 A/µs, ISD = 13 A - 4.5
Tj = 150°C (see Figure 19)
25
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15868 Rev 3
5/18
5 Page STB/F/I/P/W18NM60N
Package mechanical data
Table 8. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
mm
Typ.
16
Figure 23. TO-220FP drawing mechanical data
L7
A
B
Dia
L6
D
L5
F1 F2
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
HG
G1
L2
L3
Doc ID 15868 Rev 3
L4
7012510_Rev_K
11/18
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet STI18NM60N.PDF ] |
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