STF18NM60ND Datasheet PDF - STMicroelectronics
| Part Number | STF18NM60ND | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
| Logo |  |
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STB18NM60ND, STF18NM60ND,
STP18NM60ND, STW18NM60ND
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet − production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
' 7$%
*
6
$0Y
Features
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
VDSS @
TJmax
650 V
RDS(on)
max
ID
<0.29 Ω 13 A
• The worldwide best RDS(on)* area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
Table 1. Device summary
Marking
Package
D2PAK
18NM60ND
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2013
This is information on a product in full production.
DocID024653 Rev 1
1/22
www.st.com
22
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STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 6.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min Typ Max Unit
- 55 - ns
- 15.5 - ns
- 13 - ns
- 18 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD Source-drain current
- 13 A
ISDM (1) Source-drain current (pulsed)
- 52 A
VSD(2) Forward on voltage
ISD = 13 A, VGS=0
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
- 136
ISD =13 A, di/dt =100 A/µs,
VDD = 100 V
- 843
(see Figure 19)
- 12.5
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
- 198
di/dt =100 A/µs, ISD = 13 A - 1425
Tj = 150 °C (see Figure 19) - 14.5
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024653 Rev 1
5/22
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| Information | Total 22 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STF18NM60ND.PDF Datasheet ] | |
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