DataSheet26.com

SIC02A065NS PDF даташит

Спецификация SIC02A065NS изготовлена ​​​​«Pan Jit International» и имеет функцию, называемую «SILICON CARBIDE SCHOTTKY DIODE».

Детали детали

Номер произв SIC02A065NS
Описание SILICON CARBIDE SCHOTTKY DIODE
Производители Pan Jit International
логотип Pan Jit International логотип 

5 Pages
scroll

No Preview Available !

SIC02A065NS Даташит, Описание, Даташиты
SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-252AA
Marking: 02A065NS
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=150oC
TC=25oC
TC=125oC
VALUE
650
650
650
6.5
3.5
2
15
12
UNITS
V
V
V
A
A
A
A
A
June 13,2016-REV.00
Page 1









No Preview Available !

SIC02A065NS Даташит, Описание, Даташиты
SiC02A065NS
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction to Case
SYMBOL
IFSM
TEST CONDITIONS
TC=25oC
TC=125oC
TC=25oC
PD
TJ
TSTG
RθJC
TC=25oC
TC=125oC
VALUE
16
13
106
30
10
175
-55 to 175
5
UNITS
A
A
A
W
W
oC
oC
oC/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
VDC
VF
IR
QC
C
TEST CONDITION
IR =100uA, TJ=25oC
IF =2A, TJ=25oC
IF =2A, TJ=175oC
VR =650V, TJ=25oC
VR =650V, TJ=175oC
IF =2A, di/dt=300A/uS,
VR =400V, TJ=25oC
VR =1V, TJ=25oC, f=1MHz
VR =200V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
1
5
MAX.
-
1.8
2.2
50
110
UNITS
V
V
V
uA
uA
6 - nC
82 - pF
15 - pF
15 - pF
June 13,2016-REV.00
Page 2









No Preview Available !

SIC02A065NS Даташит, Описание, Даташиты
SiC02A065NS
TYPICAL CHARACTERISTIC CURVES
Fig.1 Forward Characteristics
Fig.2 Reverse Characteristics
Fig.3 Capacitance vs. Reverse Voltage
Fig.4 Non-Repetitive Peak Forward Surge Current
(Pulse Mode)
Fig.5 Power Derating
June 13,2016-REV.00
Fig.6 Current Derating
Page 3










Скачать PDF:

[ SIC02A065NS.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SIC02A065NSSILICON CARBIDE SCHOTTKY DIODEPan Jit International
Pan Jit International

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск