SIC04A065NS PDF даташит
Спецификация SIC04A065NS изготовлена «Pan Jit International» и имеет функцию, называемую «SILICON CARBIDE SCHOTTKY DIODE». |
|
Детали детали
Номер произв | SIC04A065NS |
Описание | SILICON CARBIDE SCHOTTKY DIODE |
Производители | Pan Jit International |
логотип |
5 Pages
No Preview Available ! |
SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-252AA
Marking: 04A065NS
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=150oC
TC=25oC
TC=125oC
VALUE
650
650
650
11
6
4
26
23
UNITS
V
V
V
A
A
A
A
A
June 13,2016-REV.00
Page 1
No Preview Available ! |
SiC04A065NS
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction to Case
SYMBOL
IFSM
TEST CONDITIONS
TC=25oC
TC=125oC
TC=25oC
PD
TJ
TSTG
RθJC
TC=25oC
TC=125oC
VALUE
29
24
127
38
13
175
-55 to 175
4
UNITS
A
A
A
W
W
oC
oC
oC/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
VDC
VF
IR
QC
C
TEST CONDITION
IR =100uA, TJ=25oC
IF =4A, TJ=25oC
IF =4A, TJ=175oC
VR =650V, TJ=25oC
VR =650V, TJ=175oC
IF =4A, di/dt=300A/uS,
VR =400V, TJ=25oC
VR =1V, TJ=25oC, f=1MHz
VR =200V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
1
6
MAX.
-
1.8
2.2
50
190
UNITS
V
V
V
uA
uA
11 - nC
155 -
25 -
25 -
pF
pF
pF
June 13,2016-REV.00
Page 2
No Preview Available ! |
SiC04A065NS
TYPICAL CHARACTERISTIC CURVES
Fig.1 Forward Characteristics
Fig.2 Reverse Characteristics
Fig.3 Capacitance vs. Reverse Voltage
Fig.4 Non-Repetitive Peak Forward Surge Current
(Pulse Mode)
Fig.5 Power Derating
June 13,2016-REV.00
Fig.6 Current Derating
Page 3
Скачать PDF:
[ SIC04A065NS.PDF Даташит ]
Номер в каталоге | Описание | Производители |
SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE | Pan Jit International |
SIC04A065NS | SILICON CARBIDE SCHOTTKY DIODE | Pan Jit International |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |