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MBR5H150 PDF даташит

Спецификация MBR5H150 изготовлена ​​​​«BCD» и имеет функцию, называемую «HIGH VOLTAGE POWER SCHOTTKY RECTIFIER».

Детали детали

Номер произв MBR5H150
Описание HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Производители BCD
логотип BCD логотип 

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MBR5H150 Даташит, Описание, Даташиты
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150
General Description
High voltage schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR5H150 is available in standard DO-27 and
DO-27(A) packages.
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
5A
150V
175°C
0.92V
Features
High Surge Capacity
Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• Guard-Ring for Stress Protection
• Pb-Free and Halogen-Free Packages are
available
The Plastic Material Carries UL Recongnition
94V-0
Mechanical Characteristics
Case: JEDEC DO-201AD Molded Plastic
• Epoxy Meets UL 94 V-0@ 0.125 in
• Weight (Approximately): 1.2 Grams
• Finish: All External Surfaces Corrosion
Resistant and Terminal
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
DO-27
DO-27(A)
Figure 1. Package Type of MBR5H150
Aug. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
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MBR5H150 Даташит, Описание, Даташиты
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150
Pin Configuration
VP Pacakge
(DO-27)
VPA Package
(DO-27(A))
Figure 2. Pin Configuration of MBR5H150 (Top View)
Ordering Information
MBR5H150
Circuit Type
Package
VP: DO-27
VPA: DO-27(A)
-
E1: Lead Free
G1: Green
Blank: Tube
TR: Ammo
Package
DO-27
DO-27(A)
Part Number
Lead Free
Green
MBR5H150VP-E1
MBR5H150VP-G1
MBR5H150VPTR-E1 MBR5H150VPTR-G1
MBR5H150VPA-E1 MBR5H150VPA-G1
Marking ID
Lead Free Green
515VP
515VPG
515VP
515VPG
515VP
515VPG
Packing
Type
Bulk
Ammo
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Aug. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
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MBR5H150 Даташит, Описание, Даташиты
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 150°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
Operating Junction Temperature RangeNote 2
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
Human Body Model =3B
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ
TSTG
dv/dt
Value
150
5
125
175
-55 to 175
10000
> 400
> 8000
Unit
V
A
A
°C
°C
V/µs
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ <
1/θJA.
Recommended Operating Conditions
Parameter
Maximum Thermal Resistance
Symbol
θJC
θJA
Condition
Junction to Case
Junction to
Ambient
Value
TBD
TBD
Unit
°C/W
Electrical Characteristics
Parameter
Symbol
Conditions
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF IF=5A, TC=25°C
Maximum Instantaneous Reverse
Current (Note 3)
IR
Rated DC
TC=25°C
Rated DC
TC=150°C
Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Voltage,
Voltage,
Value
0.92
8.0
50.0
Units
V
µA
mA
Aug. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
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