DataSheet26.com

5R380CE PDF даташит

Спецификация 5R380CE изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power Transistor».

Детали детали

Номер произв 5R380CE
Описание Power Transistor
Производители Infineon
логотип Infineon логотип 

13 Pages
scroll

No Preview Available !

5R380CE Даташит, Описание, Даташиты
IPP50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38
ID 14.1 A
Qg,typ
24.8
nC
ID,pulse
32.4
A
Eoss @ 400V
2.54
µJ
Type/OrderingCode
IPP50R380CE
Package
PG-TO 220
Marking
5R380CE
PG-TO220
tab
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-06-13









No Preview Available !

5R380CE Даташит, Описание, Даташиты
500VCoolMOSªCEPowerTransistor
IPP50R380CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.2,2016-06-13









No Preview Available !

5R380CE Даташит, Описание, Даташиты
500VCoolMOSªCEPowerTransistor
IPP50R380CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
ID
ID,pulse
EAS
EAR
IAR
dv/dt
Gate source voltage
VGS
Power dissipation (non FullPAK)
TO-220
Ptot
Operating and storage temperature Tj,Tstg
Mounting torque (non FullPAK) TO-220 -
Continuous diode forward current
IS
Diode pulse current2)
IS,pulse
Reverse diode dv/dt3)
dv/dt
Maximum diode commutation speed3) dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
Values
Typ. Max.
- 14.1
- 8.9
- 32.4
- 173
- 0.26
- 4.0
- 50
- 20
- 30
Unit Note/TestCondition
A
TC = 25°C
TC = 100°C
A TC=25°C
mJ ID =4A; VDD = 50V
mJ ID =4A; VDD = 50V
A-
V/ns VDS=0...400V
V
static;
AC (f>1 Hz)
- - 98 W TC=25°C
-55 -
--
--
--
--
--
150
60
10
32.4
15
500
°C -
Ncm M3 and M3.5 screws
A TC=25°C
A
V/ns
A/µs
TC = 25°C
VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-220
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
- - 1.27
- - 62
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.2,2016-06-13










Скачать PDF:

[ 5R380CE.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
5R380CEPower TransistorInfineon
Infineon

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск