G4BC30W PDF даташит
Спецификация G4BC30W изготовлена «International Rectifier» и имеет функцию, называемую «IRG4BC30W». |
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Детали детали
Номер произв | G4BC30W |
Описание | IRG4BC30W |
Производители | International Rectifier |
логотип |
8 Pages
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PD - 91629A
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) max. = 2.70V
@VGE = 15V, IC = 12A
TO-220AB
Max.
600
23
12
92
92
± 20
180
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
80
–––
Units
°C/W
g
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4/24/2000
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IRG4BC30W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
11
—
—
—
—
Typ. Max. Units
—— V
—— V
0.34 — V/°C
2.1 2.7
2.45 —
1.95 —
V
— 6.0
-11 — mV/°C
16 — S
— 250 µA
— 2.0
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 12A
VGE = 15V
IC = 23A
See Fig.2, 5
IC = 12A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100 V, IC = 12A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 76
— 7.6 11
— 18 27
— 25 —
IC = 12A
nC VCC = 400V
VGE = 15V
See Fig.8
— 16 — ns TJ = 25°C
— 99 150
IC = 12A, VCC = 480V
— 67 100
VGE = 15V, RG = 23Ω
— 0.13 —
Energy losses include "tail"
— 0.13 — mJ See Fig. 9, 10, 13, 14
— 0.26 0.35
— 24 —
— 17 —
— 150 —
— 150 —
TJ = 150°C,
ns IC = 12A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
— 0.55 — mJ See Fig. 11,13, 14
— 7.5 — nH Measured 5mm from package
— 980 —
— 71 —
— 18 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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IRG4BC30W
40
30
Square wave:
20 60 % of ra ted
voltage
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as s pec ified
Power D is sipation = 21W
T ria ngu la r w av e:
C lamp voltage:
80% of rated
10
Ideal diodes
0
0.1
1
10
f, Frequenc y (k Hz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100
TJ = 150 °C
10
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
5.0
VCC = 50V
5µs PULSE WIDTH
6.0 7.0 8.0 9.0 10.0
VGE, Gate-to-Emitter Voltage (V)
11.0
Fig. 3 - Typical Transfer Characteristics
3
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