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2SD2908 PDF даташит

Спецификация 2SD2908 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «Transistor».

Детали детали

Номер произв 2SD2908
Описание Transistor
Производители Bruckewell
логотип Bruckewell логотип 

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2SD2908 Даташит, Описание, Даташиты
2SD2908
Low VCE(sat) transistor(80V,0.7A)
Features
Low VCE(sat).
Excellent DC current gain characteristics.
Complements the 2SB1386
RoHS compliant package
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [2SD2908]
© Bruckewell Technology Corporation Rev. A -2014









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2SD2908 Даташит, Описание, Даташиты
2SD2908
Low VCE(sat) transistor(80V,0.7A)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (Ta=25°C unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Value
50
20
6
5
500
-55 to +150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO Collector-base breakdown voltage
IC = 50μA , IE = 0
V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA , IB = 0
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IE = 50μA , IC = 0
VCB = 40 V , IE = 0
VEB = 5 V , IC = 0
VCE = 2 V , IC = 0.5 A
IC = 4 A , IB = 0.1 A
fT Transition frequency
VCE = 6 V , IC = 50 mA
f = 100MHz
Cob Collector output capacitance
VCB = 20 V , IE = 0
f = 1.0MHz
MIN
50
20
6
120
TYP
0.25
150
MAX
0.5
0.5
390
1.0
UNIT
V
V
V
μA
μA
V
MHz
30 pF
CLASSIFICATION OF hFE
Marking
Rank
Range
AHQ
Q
120-270
AHR
R
180-390
Publication Order Number: [2SD2908]
© Bruckewell Technology Corporation Rev. A -2014









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2SD2908 Даташит, Описание, Даташиты
2SD2908
Low VCE(sat) transistor(80V,0.7A)
TYPICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
FIG.1- GROUNDED EMITTER
PROPAGATION CHARACTERISTICS
FIG.2- GROUNDED EMITTER OUTPUT
CHARACTERISTICS
FIG.3- DC CURRENT GAIN VS. COLLECTOR
CURRENT(I)
FIG.4- DC CURRENT GAIN VS. COLLECTOR
CURRENT(II)
FIG.5- DC CURRENT GAIN VS. COLLECTOR
CURRENT(III)
FIG.6- COLLECTOR EMITTER SATURATION
VOLTAGE VS. COLLECTOR CURRENT(I)
Publication Order Number: [2SD2908]
© Bruckewell Technology Corporation Rev. A -2014










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