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Datasheet D1006 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | D1006 | NPN Transistor, 2SD1006 DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country | Renesas | data |
2 | D1006UK | METAL GATE RF SILICON FET TetraFET
D1006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B C A
E
1
2
3
F
G
6
J
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
D H M
Q
N
K
O
P
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crs | Seme LAB | gate |
D10 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | D10 | Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte STMicroelectronics data | | |
2 | D1000 | NPN Transistor, 2SD1000 Renesas data | | |
3 | D1001 | NPN Transistor, 2SD1001 Renesas data | | |
4 | D1001UK | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED TetraFET
D1001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA Seme LAB data | | |
5 | D1002UK | METAL GATE RF SILICON FET MECHANICAL DATA
A
B C
1
4 M
2 3
F
D E
G
HK
PIN 1 PIN 3
SOURCE SOURCE
DA
PIN 2 PIN 4
IJ
DRAIN GATE
DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.1 Seme LAB gate | | |
6 | D1003UK | METAL GATE RF SILICON FET TetraFET
D1003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA Seme LAB gate | | |
7 | D1004 | METAL GATE RF SILICON FET TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H I
F
M
K
J
N
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | |
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Número de pieza | Descripción | Fabricantes | |
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