|
|
PDF MTE013N08E3 Data sheet ( Hoja de datos )
| Número de pieza | MTE013N08E3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTE013N08E3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE013N08E3 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=10V, ID=20A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
80V
58A
9.4A
9.5 mΩ(typ)
Symbol
MTE013N08E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE013N08E3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE013N08E3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss 1.2
1
C oss
0.8
Crss
0.6
ID=1mA
ID=250μA
10
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
VDS=15V
1
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
VDS=40V
2
ID=58A
0
0 6 12 18 24 30 36 42
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
RDSON
100 Limited
10μs
100μs
10
1 TC=25°C, Tj(max)=175°C
VGS=10V, RθJC=1.1°C/W
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
80
70 Silicon limit
60
50
40 Package limit
30
20
10 VGS=10V, RθJC=1.1°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTE013N08E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE013N08E3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTE013N08E3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |