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PDF MTE011N10RH8 Data sheet ( Hoja de datos )
| Número de pieza | MTE011N10RH8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2016.07.05
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE011N10RH8 BVDSS
100V
ID@VGS=10V, TC=25°C
45A
ID@VGS=10V, TA=25°C
15A
RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
MTE011N10RH8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE011N10RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE011N10RH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2016.07.05
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
10
0
100
10
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8 VDS=50V
6
1 VDS=15V
4
VDS=80V
0.1
0.01
0.001
1000
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
Maximum Safe Operating Area
100
2
ID=22A
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
60
RDSON
100 Limited
100μs
10
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1ms
10ms
100ms
1s
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
50
40
30
20
VGS=10V, Tj(max)=150°C,
10 RθJC=2.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE011N10RH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTE011N10RH8.PDF ] | |
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