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MTB5D0P03H8 PDF даташит

Спецификация MTB5D0P03H8 изготовлена ​​​​«Cystech Electonics» и имеет функцию, называемую «P-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв MTB5D0P03H8
Описание P-Channel Enhancement Mode Power MOSFET
Производители Cystech Electonics
логотип Cystech Electonics логотип 

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MTB5D0P03H8 Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03H8 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-17A
-30V
-90A
-22A
3.2mΩ
5.1mΩ
Symbol
MTB5D0P03H8
Outline
Pin 1
EDFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB5D0P03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03H8
CYStek Product Specification









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MTB5D0P03H8 Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V (Note1)
Continuous Drain Current @ TC=100°C, VGS=-10V (Note1)
Continuous Drain Current @ TA=25°C, VGS=-10V (Note2)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note2)
Pulsed Drain Current
(Note3)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-15V
TC=25
(Note1)
Total Power Dissipation
TC=100
TA=25°C
(Note1)
(Note2)
TA=70°C
(Note2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
10s Steady State
-30
±25
-90
-57
-22 -14.2
-17.6
-11.4
-200 *1,2
-30
45
83.3
33.3
5.0 2.1
3.2 1.3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol Typical Maximum Unit
Thermal Resistance, Junction-to-case
Rth,j-c
1
1.5 °C/W
Thermal Resistance, Junction-to-ambient t10s
(Note2) Steady State
Rth,j-a
18
50
25
60
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
-30
-1.0
-
-
-
-
-
-
- - V VGS=0V, ID=-250μA
- -2.5 V VDS = VGS, ID=-250μA
58 -
S VDS =-5V, ID=-20A
-
±100
nA VGS=±25V
-
-
-1
-25
μA
VDS =-24V, VGS =0V
VDS =-24V, VGS =0, Tj=125°C
3.2 5.5 mΩ VGS =-10V, ID=-20A
5.1 8.5 mΩ VGS =-4.5V, ID=-17A
MTB5D0P03H8
CYStek Product Specification









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MTB5D0P03H8 Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 3/ 9
Dynamic *4
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Rg
-
-
-
-
-
-
-
-
-
-
-
8120
919
878
121
18.6
24.5
19.4
21.6
133
49.2
3.8
-
-
-
181
-
-
29
32
200
74
-
pF
nC
ns
Ω
Source-Drain Diode
VSD *1
- -0.8 -1.2 V
trr - 26 - ns
Qrr - 17 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
*4.Guaranteed by design, not subject to production testing.
VDS=-15V, VGS=0V, f=1MHz
VDS=-24V, VGS=-10V, ID=-20A
VDS=-15V, ID=-20A, VGS=-10V,
RG=2.7Ω
f=1MHz
IS=-20A, VGS=0V
IF=-10A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB5D0P03H8
unit : mm
CYStek Product Specification










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MTB5D0P03H8P-Channel Enhancement Mode Power MOSFETCystech Electonics
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