|
|
PDF MTA50N15H8 Data sheet ( Hoja de datos )
| Número de pieza | MTA50N15H8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTA50N15H8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C957H8
Issued Date : 2016.06.28
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTA50N15H8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=20A
• Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=10A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
150V
26A
18.4A
4.6A
3.7A
44mΩ(typ)
43mΩ(typ)
Symbol
MTA50N15H8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTA50N15H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA50N15H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C957H8
Issued Date : 2016.06.28
Revised Date :
Page No. : 5/ 9
Typical Characteristics
Typical Output Characteristics
50
Brekdown Voltage vs Ambient Temperature
1.4
40
10V, 9V, 8V, 7V,6V,5V,4V,3V,2.5V
30
1.2
1
20 VGS=2V
10
0
0
VGS=1.5V
24 68
VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
100
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
VGS=10V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400 ID=20A
350
300
250
200
150
100
50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.5
VGS=10V, ID=20A
2.0
1.5
1.0
0.5
RDS(ON)@Tj=25°C :44mΩ typ
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA50N15H8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTA50N15H8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTA50N15H8 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |