2N6661 PDF даташит
Спецификация 2N6661 изготовлена «Microchip» и имеет функцию, называемую «N-Channel Enhancement-Mode Vertical DMOS FET». |
|
Детали детали
Номер произв | 2N6661 |
Описание | N-Channel Enhancement-Mode Vertical DMOS FET |
Производители | Microchip |
логотип |
10 Pages
No Preview Available ! |
2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low CISS and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain
Applications
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6661 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
GATE
SOURCE
DRAIN
TO-39
Case: Drain
See Table 2-1 for pin information
2016 Microchip Technology Inc.
DS20005516A-page 1
No Preview Available ! |
2N6661
1.0 ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage ......................................................................................................................................... BVDSS
Drain-to-gate voltage.............................................................................................................................................BVDGS
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature .......................................................................................................... -55 to 150 °C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter
Symbol
Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage
Gate threshold voltage
VGS(th) change with temperature
Gate body leakage current
Zero gate voltage drain current
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
On-state drain current
Static drain-to-source on-state
resistance
AC Parameters (Note 2)
ID(ON)
RDS(ON)
90 -
- V VGS= 0V, ID= 10µA
0.8 - 2.0 V VGS= VDS, ID= 1.0mA
- -3.8 -5.5 mV/°C VGS= VDS, ID= 1.0mA (Note 2)
- - 100 nA VGS= ±20V, VDS= 0V
- - 10 µA VGS= 0V, VDS= Max rating
- - 500
VDS= 0.8 Max Rating,
VGS= 0V, TA= 125°C (Note 2)
1.5 -
- A VGS= 10V, VDS= 10V
- - 5.0 Ω VGS= 5.0V, ID= 0.3A
- - 4.0
VGS= 10V, ID= 1.0A
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode Parameters
GFS
CISS
COSS
CRSS
t(ON)
t(OFF)
170 -
--
--
--
--
--
- mmho VDS= 25V, ID= 0.5A
50 pF VGS= 0V,
40
VDS= 24V,
f = 1.0MHz
10
10 ns VDD= 25V, ID= 1.0A,
10 RGEN= 25Ω
Diode forward voltage drop
VSD
- 1.2 -
V VGS= 0V, ISD= 1.0A (Note 1)
Reverse recovery time
trr
- 350 -
ns VGS= 0V, ISD= 1.0A (Note 2)
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameter
Symbol
Temperature Ranges
Operating and Storage Temperature
TA
Min Typ Max Units Conditions
-55 – 150 °C
DS20005516A-page 2
2016 Microchip Technology Inc.
No Preview Available ! |
2N6661
THERMAL CHARACTERISTICS
Package
TO-39
ID(1)
continuous
(mA)
350
ID
pulsed
(A)
3.0
Power
Dissipation
@TA = 25°C (W)
6.25
Note 1: ID (continuous) is limited by max rated TJ.
Product Summary
BVDSX/BVDGS
(V)
90
RDS(ON)
(max) (Ω)
4.0
IDR(1)
(mA)
350
IDRM
(A)
3.0
IDSS
(min) (A)
1.5
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Types
and Packaging Information.
TABLE 2-1: PIN DESCRIPTION
Pin # TO-39
1
2
3
Function
SOURCE
GATE
DRAIN
2016 Microchip Technology Inc.
DS20005516A-page 3
Скачать PDF:
[ 2N6661.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola Inc |
2N6660 | N-Channel 60 V (D-S) MOSFET | Vishay Siliconix |
2N6660 | Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD | New Jersey Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |