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2N6660 PDF даташит

Спецификация 2N6660 изготовлена ​​​​«Seme LAB» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв 2N6660
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Seme LAB
логотип Seme LAB логотип 

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2N6660 Даташит, Описание, Даташиты
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage
60V
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM Pulsed Drain Current (1)
3.0A
PD
Total Power Dissipation at
TC 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ Operating Temperature Range
-65 to +150°C
Tstg Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
RθJA
Thermal Resistance, Junction To Ambient
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width 300us, δ ≤ 2%
Min.
Typ.
Max. Units
25 °C/W
172 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8263
Website: http://www.semelab-tt.com
Issue 2
Page 1 of 3









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2N6660 Даташит, Описание, Даташиты
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
VDS = VGS
ID = 1.0µA
ID = 1.0mA
VGS(th)
Gate Threshold Voltage
TC = 125°C
TC = -55°C
IGSS
Gate-Source Leakage Current
VGS = ±20V
VDS = 0V
TC = 125°C
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 48V
TC = 125°C
ID(ON)(2)
On-State Drain Current
VDS = 10V
VGS = 10V
RDS(on)(2)
Static Drain-Source
On-State Resistance
gfs(2)
VSD(2)
trr(2)
Forward Transconductance
Body Diode Forward Voltage
Body Diode Reverse Recovery
VGS = 5V
VGS = 10V
VDS = 25V
VGS = 0
VGS = 0
ID = 0.3A
ID = 1.0A
TC = 125°C
ID = 0.5A
IS = 1.0A
IS = 1.0A
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
td(off)
Turn-Off Delay Time
VGS = 0
VDS = 25V
f = 1.0MHz
VDD = 25V
ID = 1.0A
RG = 50
Min. Typ. Max. Units
60 V
0.8 2.0
0.3
2.5
±100
±500
1.0
100
1.5
5.0
3.0
5.6
170
0.7 1.6
350
V
nA
µA
A
mƱ
V
ns
50
40 pF
10
10
ns
10
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8263
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3









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2N6660 Даташит, Описание, Даташиты
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
2.54
(0.100)
45°
TO39 PACKAGE (TO-205AD)
Pin 1 - Source
Pin 2 - Gate
Pin 3 / Case - Drain
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8263
Website: http://www.semelab-tt.com
Issue 2
Page 3 of 3










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