DataSheet26.com

11AA02E48 PDF даташит

Спецификация 11AA02E48 изготовлена ​​​​«Microchip» и имеет функцию, называемую «EEPROM».

Детали детали

Номер произв 11AA02E48
Описание EEPROM
Производители Microchip
логотип Microchip логотип 

30 Pages
scroll

No Preview Available !

11AA02E48 Даташит, Описание, Даташиты
11AA02E48/11AA02E64
2K UNI/O® Serial EEPROMs with EUI-48or EUI-64Node Identity
Device Selection Table
Part Number
Density
(bits)
11AA02E48
11AA02E64
2K
2K
VCC Range
1.8V-5.5V
1.8V-5.5V
Page Size
(Bytes)
16
16
Temp.
Ranges
I
I
Packages
SN, TT
SN, TT
Node Address
EUI-48
EUI-64
Features
• Pre-Programmed Globally Unique, 48-Bit or
64-Bit Node Address
• Compatible with EUI-48and EUI-64
• Single I/O, UNI/O® Serial Interface Bus
• Low-Power CMOS Technology:
- 1 mA active current, typical
- 1 µA standby current, maximum
• 256 x 8-Bit Organization
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kbps Maximum Bit Rate – Equivalent to
100 kHz Clock Frequency
• Self-Timed Write Cycle (including Auto-Erase)
• Page-Write Buffer for up to 16 Bytes
• STATUS Register for Added Control:
- Write Enable Latch bit
- Write-In-Progress bit
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
• High Reliability:
- Endurance: 1,000,000 erase/write cycles
- Data retention: >200 years
- ESD protection: >4,000V
• 3-Lead SOT-23 and 8-Lead SOIC Packages
• Pb-Free and RoHS Compliant
• Available Temperature Ranges:
- Industrial (I): -40°C to +85°C
Description
The Microchip Technology Inc.
11AA02E48/11AA02E64 (11AA02EXX(1)) device is a
2 Kbit Serial Electrically Erasable PROM. The device is
organized in blocks of x8-bit memory and support the
patented(2) single I/O UNI/O® serial bus. By using
Manchester encoding techniques, the clock and data
are combined into a single, serial bit stream (SCIO),
where the clock signal is extracted by the receiver to
correctly decode the timing and value of each bit.
Note 1: 11AA02EXX is used in this document as
a generic part number for the 11AA02E48
and 11AA02E64 devices.
2: Microchip’s UNI/O® Bus products are
covered by the following patents issued
in the U.S.A.: 7,376,020 and 7,788,430.
Low-voltage design permits operation down to 1.8V,
with standby and active currents of only 1 µA and
1 mA, respectively.
The 11AA02EXX is available in standard 8-lead
SOIC and 3-lead SOT-23 packages.
Package Types (not to scale)
3-Lead SOT-23
(TT)
VSS 3
2 VCC
1 SCIO
SOIC
(SN)
NC 1
NC 2
NC 3
VSS 4
8 VCC
7 NC
6 NC
5 SCIO
Pin Function Table
Name
Function
SCIO
VSS
VCC
Serial Clock, Data Input/Output
Ground
Supply Voltage
2008-2016 Microchip Technology Inc.
DS20002122D-page 1









No Preview Available !

11AA02E48 Даташит, Описание, Даташиты
11AA02E48/11AA02E64
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
VCC.............................................................................................................................................................................6.5V
SCIO w.r.t. VSS.................................................................................................................................... -0.6V to VCC+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
VCC = 2.5V to 5.5V
VCC = 1.8V to 2.5V
TA = -40°C to +85°C
TA = -20°C to +85°C
Param.
No.
Symbol
Characteristic
Min.
Max. Units
Test Conditions
D1
VIH High-Level Input
0.7 VCC
VCC+1
V
Voltage
D2 VIL Low-Level Input
Voltage
-0.3
0.3 VCC
V VCC 2.5V
-0.3
0.2 VCC
V VCC < 2.5V
D3
VHYS Hysteresis of Schmitt 0.05 Vcc
Trigger Inputs
(SCIO)
V VCC 2.5V (Note 1)
D4
VOH High-Level Output
VCC -0.5
V IOH = -300 µA, VCC = 5.5V
Voltage
VCC -0.5
V IOH = -200 µA, Vcc = 2.5V
D5 VOL Low-Level Output
Voltage
0.4 V IOI = 300 µA, VCC = 5.5V
0.4 V IOI = 200 µA, Vcc = 2.5V
D6
IO Output Current Limit
±4 mA VCC = 5.5V (Note 1)
(Note 2)
— ±3 mA Vcc = 2.5V (Note 1)
D7 ILI Input Leakage
Current (SCIO)
— ±1 µA VIN = VSS or VCC
D8
CINT Internal Capacitance
(all inputs and
outputs)
7 pF TA = 25°C, FCLK = 1 MHz,
VCC = 5.0V (Note 1)
D9 ICCREAD Read Operating
Current
— 3 mA VCC = 5.5V, FBUS = 100 kHz,
CB = 100 pF
— 1 mA VCC = 2.5V, FBUS = 100 kHz,
CB = 100 pF
D10 ICCWRITE Write Operating
Current
— 5 mA VCC = 5.5V
— 3 mA VCC = 2.5V
D11 Iccs Standby Current — 1 µA VCC = 5.5V, TA = 85°C
D12 ICCI Idle Mode Current
50 µA VCC = 5.5V
Note 1: This parameter is periodically sampled and not 100% tested.
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.
DS20002122D-page 2
2008-2016 Microchip Technology Inc.









No Preview Available !

11AA02E48 Даташит, Описание, Даташиты
11AA02E48/11AA02E64
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
VCC = 2.5V to 5.5V
VCC = 1.8V to 2.5V
TA = -40°C to +85°C
TA = -20°C to +85°C
Param.
No.
Symbol
Characteristic
Min. Max.
Units
Test Conditions
1 FBUS Serial Bus
Frequency
10 100
2 TE Bit Period
10 100
3
TIJIT Input Edge Jitter
— ±0.06
Tolerance
kHz
µs
UI Note 2
4 FDRIFT Serial Bus
— ±0.50
% per byte
Frequency Drift Rate
Tolerance
5 FDEV Serial Bus
— ±5 % per command
Frequency Drift Limit
6
TOJIT Output Edge Jitter
— ±0.25
7
TR SCIO Input Rise
— 100
Time (Note 1)
8
TF SCIO Input Fall Time —
100
(Note 1)
9
TSTBY Standby Pulse Time 600
10
TSS Start Header Setup
10
Time
UI Note 2
ns
ns
µs
µs
11 THDR Start Header Low 5 —
Pulse Time
µs
12
TSP Input Filter Spike
— 50
Suppression (SCIO)
ns Note 1
13 TWC Write Cycle Time — 5
(byte or page)
10
ms Write, WRSR commands
ms ERAL, SETAL commands
14
Endurance (per
1M —
cycles
25°C, VCC = 5.5V (Note 3)
page)
Note 1: This parameter is periodically sampled and not 100% tested.
2: A Unit Interval (UI) is equal to 1-bit period (TE) at the current bus frequency.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total EnduranceModel which can be obtained on Microchip’s website:
www.microchip.com.
TABLE 1-3: AC TEST CONDITIONS
AC Waveform
VLO = 0.2V
VHI = VCC - 0.2V
CL = 100 pF
Timing Measurement Reference Level
Input
Output
0.5 VCC
0.5 VCC
2008-2016 Microchip Technology Inc.
DS20002122D-page 3










Скачать PDF:

[ 11AA02E48.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
11AA02E48EEPROMMicrochip
Microchip

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск